Chemical-mechanical polishing liquid and its application method

Abstract

The invention discloses a chemical-mechanical polishing liquid, which comprises water, a grinding agent and a strong oxidant, the standard electrode potential of which is greater than 0.52V. Added with a strong oxidant, the chemical-mechanical polishing liquid of the invention can obtain a very high polishing speed, so that the chemical-mechanical polishing of carbon element can be accelerated.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid and a using method thereof. Background technique [0002] With the continuous development of semiconductor technology and the continuous increase of interconnection layers in large-scale integrated circuits, the planarization technology of conductive layers and insulating dielectric layers has become particularly critical. In the 1980s, the chemical mechanical polishing (CMP) technology pioneered by IBM is considered to be the most effective method for global planarization. [0003] Chemical Mechanical Polishing (CMP) consists of chemical action, mechanical action, and a combination of both. It usually consists of a grinding table with a polishing pad, and a grinding head for carrying chips. The grinding head holds the chip and presses the front side of the chip against the polishing pad. When chemical mechanical polishing is ...

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Problems solved by technology

Because carbon is very stable at room temperature, it is not easy to react chemically, and it has good resistance to mecha

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