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Graphene-containing chemical mechanical polishing solution

A chemical mechanical and polishing liquid technology, applied in the field of polishing liquid, can solve the problems of low polishing rate and inability to take into account the polishing effect, and achieve the effect of low surface roughness

Active Publication Date: 2015-05-06
SHANGHAI XINANNA ELECTRONICS TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of chemical mechanical polishing liquid, is used for overcoming the problem that the polishing rate is low in the prior art, can not take into account the polishing effect

Method used

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Embodiment 1

[0041] This embodiment discloses a chemical mechanical polishing liquid, based on the total mass of the chemical mechanical polishing liquid, the chemical mechanical polishing liquid includes the following components and weight percentages:

[0042] Inorganic nanoparticles 20wt%

[0043] Chemical additives 0.5wt%

[0044] The balance is a pH regulator and water;

[0045] The inorganic nanoparticles include silicon dioxide and graphene; based on the total mass of the chemical mechanical polishing liquid, the mass percentage of the graphene is 1 wt%.

[0046] Specifically, the particle size of the graphene is 100-200 nm.

[0047] Specifically, the pH of the chemical mechanical polishing solution is 9.5.

Embodiment 2

[0049] This embodiment discloses a chemical mechanical polishing liquid, based on the total mass of the chemical mechanical polishing liquid, the chemical mechanical polishing liquid includes the following components and weight percentages:

[0050] Inorganic nanoparticles 30wt%

[0051] Chemical additives 2wt%

[0052] The balance is a pH regulator and water;

[0053] The inorganic nanoparticles include silicon dioxide and graphene; based on the total mass of the chemical mechanical polishing liquid, the mass percentage of the graphene is 5 wt%.

[0054] Specifically, the particle size of the graphene is 100-500 nm.

[0055] Specifically, the pH of the chemical mechanical polishing solution is 9.8.

Embodiment 3

[0057] This embodiment discloses a chemical mechanical polishing liquid, based on the total mass of the chemical mechanical polishing liquid, the chemical mechanical polishing liquid includes the following components and weight percentages:

[0058] Inorganic nanoparticles 40wt%

[0059] Chemical additives 5wt%

[0060] The balance is a pH regulator and water;

[0061] The inorganic nanoparticles include silicon dioxide and graphene; based on the total mass of the chemical mechanical polishing liquid, the mass percentage of the graphene is 4 wt%.

[0062] Specifically, the particle size of the graphene is 100-200 nm.

[0063] Specifically, the pH of the chemical mechanical polishing solution is 9.5.

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Abstract

The invention discloses a chemical mechanical polishing solution. Based on the total mass, the chemical mechanical polishing solution comprises the following components in percentage by weight: 10-50wt% of inorganic nanoparticles, 0.01-5wt% of chemical additives and the balance of pH regulators and water, wherein the inorganic nanoparticles at least comprise silica and graphene; and the mass percent of the graphene is 0.01-10wt% based on the total mass of the chemical mechanical polishing solution. The chemical mechanical polishing solution disclosed by the invention has the following beneficial effects in the process of polishing sapphire and other high-hardness materials: because the hardness of the graphene particles is high, the polishing speed is high, and the efficiency is high; and moreover, the surface toughness of the polished sapphire and other high-hardness materials is low, and obvious defects such as orange skin, corrosion or scratch and the like are avoided.

Description

technical field [0001] The invention relates to a polishing fluid, in particular to a chemical mechanical polishing fluid for high-hardness materials. Background technique [0002] Chemical mechanical polishing technology is a very important surface planarization technology, which is widely used in the preparation of integrated circuit chips, silicon wafer polishing, sapphire wafers, SiC wafers, metal panels and other materials and devices. Continuously improving polishing efficiency and surface quality is the main development direction of chemical mechanical polishing technology. The chemical mechanical polishing technology is to obtain an ultra-flat surface through the cooperation of the mechanical action of the abrasive and the chemical action of the chemical composition, in which the abrasive plays an important role in the polishing efficiency. [0003] The chemical mechanical polishing fluid disclosed in the prior art mainly includes two parts: an inorganic abrasive an...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L21/02
CPCC09G1/02
Inventor 刘卫丽宋志棠
Owner SHANGHAI XINANNA ELECTRONICS TECH
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