Device and method for controlling basal heating in chemical gaseous phase sedimentary chamber

Abstract

Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber. The apparatus comprises a heater located within a chamber; a tray located near the heater within the chamber and spaced apart from the heater and used for carrying the base; a first temperature control unit coupled with a surface of the tray for carrying the base and used for measuring the temperature of the tray surface and outputting a first control signal as a function of a set temperature and the temperature of the tray surface; and a second temperature control unit connected to the first temperature control unit and used for measuring the temperature of the middle of the area between the tray and the heater, and also for outputting a second control signal as a function of the first control signal and the temperature of the middle, with the heater being coupled with the second temperature control unit to heat according to the second control signal. Further provided is a method for controlling the heating of the base within a chemical vapour deposition chamber. A steady base temperature can be obtained via the apparatus.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a device and method for controlling substrate heating in a chemical vapor deposition chamber. Background technique [0002] Metal Organic Chemical Vapor Deposition (MOCVD) is a new type of vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy. MOVCD has the advantages of easy growth control, high-purity materials, and large-area epitaxial layer uniformity. [0003] The MOCVD reactor is the main process equipment used to manufacture high brightness LED chips. refer to figure 1 , shows a schematic structural view of an embodiment of an MOCVD reactor in the prior art. The MOCVD reactor includes: a chamber 10, a heater 11 located at the bottom of the chamber 10, a tray 13 located on the heater 11, the tray 13 is associated with a rotating mechanism through a support structure 12, and the tray 13 is used to carry the substrate 14 , and the MOCVD...

AI Technical Summary

Problems solved by technology

[0008] During the temperature rise process of the MOCVD reactor, the lagging tray 13 upper surface temperature is input to the temperature controller 16, and the temperature controller 16 will control the heater 11 to increase the current of the DC power supply, which will easily cause the heater 11 to overheat and make the tray 13 Upper surface temperature exceeds temperature set point

Afterwards, the temperature controller 16 can control the heater 11 to reduce the current of the DC power supply, so that the upper surface temperature of the tray 13 drops to the temperature setting value, but the hysteresis upper surface temperature of the tray 13 is input into the temperature controller 16, which is easy to make The power of the heater 11 controlled by the temperature controller 16 drops too fast, which will cause the temperature on the upper surface of the tray 13 to be lower than the temperature setting value, thereby causing the phenomenon of temperature oscillation in the chamber 10

[0009] For the MOCVD process, usually only a temperature change of 1°C will lead to a decrease in the yield of more than 5%, so how to obtain a stable substrate temperature to improve the yield of the MOCVD process has become a technical problem to be solved urgently by those skilled in the art one

[0010] For more technical solutions on MOCVD reactor temperature control, please refer to the Chinese patent application with publication number CN101906622A, but the technical solution of the Chinese patent application also fails to solve the above technical problems

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