Semiconductor devices and methods for fabricating the same

Abstract

Embodiments of semiconductor devices and methods for fabricating the semiconductor devices are provided. The method includes forming a cavity in a semiconductor region laterally adjacent to a gate electrode structure of a transistor. The gate electrode structure is disposed on a channel region of a first silicon-germanium alloy. A strain-inducing silicon-germanium alloy is formed in the cavity and in contact with the first silicon-germanium alloy. The strain-inducing silicon-germanium alloy includes carbon and has a composition different from the first silicon-germanium alloy.

Description

technical field [0001] The present invention relates generally to semiconductor devices and methods for fabricating semiconductor devices, and more particularly to semiconductor devices having transistors with enhanced performance by using transistors in the drain and source regions and methods for fabricating such semiconductor devices. This is achieved using strain inducing silicon germanium alloys to enhance charge carrier channel mobility in the channel region of the transistor. Background technique [0002] Most integrated circuits (ICs) today are implemented using multiple interconnected field effect transistors (FETs), also known as metal oxide semiconductor field effect transistors (MOSFETs), or simply MOS transistors. A FET includes a gate electrode structure that acts as a control electrode and drain and source regions through which current can flow. A control voltage applied to the gate electrode structure controls current flow through the channel region between ...

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