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Metamorphic substrate system, method of manufacture of same, and iii-nitrides semiconductor device

A nitride semiconductor, substrate technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor crystallinity

Inactive Publication Date: 2012-07-25
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of these proposals is that they require the use of aluminum oxynitride which tends to have poor crystallinity

Method used

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  • Metamorphic substrate system, method of manufacture of same, and iii-nitrides semiconductor device
  • Metamorphic substrate system, method of manufacture of same, and iii-nitrides semiconductor device
  • Metamorphic substrate system, method of manufacture of same, and iii-nitrides semiconductor device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] It now follows how to prepare a modified substrate system highly suitable for growing high-efficiency III-nitride LED devices with reduced threading dislocations.

[0061] First, the sapphire (Al 2 o 3 ) The support substrate 1 was inserted into the MOVPE reactor and thermally cleaned under flowing hydrogen. The MOVPE reactor was equipped with the following gas sources: hydrogen, nitrogen, oxygen, ammonia, and silane; and the following liquid precursor sources: trimethylgallium (TMG), trimethylindium (TMI), trimethylaluminum (TMA), and Bis(cyclopentadienyl)magnesium (Cp2Mg). After thermal cleaning the support substrate is cooled to a temperature suitable for the growth of the metamorphic transition zone, temperatures in the range of 200 to 900°C are preferred, 500°C is most preferred. The transition zone below 200°C and above 900°C will not be easy to form. Metamorphic transition zone growth can be either Al 2 o 3 Layer 4 or Al x Ga 1-x N layer 5 starts. In the...

Embodiment 2

[0074] Another illustration of how to prepare a modified substrate system highly suitable for growing high efficiency III-nitride LED devices with reduced threading dislocations now follows.

[0075] A silicon (Si) support substrate 1 was first inserted into an MOVPE reactor and thermally cleaned under flowing hydrogen. The MOVPE reactor was equipped with the following gas sources: hydrogen, nitrogen, oxygen, ammonia, and silane; and the following liquid precursor sources: trimethylgallium (TMG), trimethylindium (TMI), trimethylaluminum (TMA), and Bis(cyclopentadienyl)magnesium (Cp2Mg). After thermal cleaning the support substrate is cooled to a temperature suitable for the growth of the metamorphic transition zone, a temperature in the range of 200 to 1000°C is preferred, 900°C is most preferred. Below 200°C, the transition zone will not be easily formed. Metamorphic transition region growth can be Si layer 4 or Al x Ga 1-x N layer 5 starts. In the former case, the Si la...

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Abstract

A laminated substrate system containing a metamorphic transition region (2) made from multiple and alternating layers of AlxGa1-xN (5) and the supporting substrate material (4) (or a material having the same general chemical composition thereto). A III-Nitrides semiconductor device (2) with a low dislocation density is formed on top of the laminated substrate system. The multiple layers (4,5) of the metamorphic transition region form a superlattice structure whose lattice constant and structure changes along its growth direction from that of the supporting substrate (1) (in the vicinity of the supporting substrate) to that of the device (3) (in the vicinity of the device).

Description

technical field [0001] The present invention relates to a substrate structure, and in particular to a substrate structure for a III-nitride material system such as an (Al, Ga, In)N material system. The present invention also relates to methods of preparing substrate structures, and in particular to the preparation of substrate structures for III-nitride material systems such as (Al, Ga, In)N material systems. The invention also relates to III-nitride semiconductor devices incorporating the substrate system of the invention - the substrate system of the invention can be used as a substrate for the manufacture of optoelectronic semiconductor devices such as light emitting diodes (LEDs), laser diodes ( LD) and solar cells, or electronic semiconductor devices such as heterostructure field effect transistors (HFETs) or high electron mobility transistors (HEMTs). [0002] By (Al,Ga,In)N means the general formula Al x Ga y In (1-x-y) Compounds of N where 0≤x≤1 and 0≤y≤1. For con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/00
CPCH01L21/0245H01L29/20H01L21/02458H01L33/12H01L21/02488H01L29/15H01L33/0066H01L21/02507H01L21/02381H01L21/0237H01L21/0254H01L21/20H01L21/2011H01L33/007H01L33/0075
Inventor 斯图尔特·爱德华·胡帕瓦莱里·贝里曼-博斯奎特
Owner SHARP KK