Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot cascade laser

A technology of quantum dots and lasers, which is applied in the direction of lasers, phonon exciters, laser components, etc., can solve the problems of quantum dot cascaded lasers that cannot be lased, and the performance index is not high, and achieve the improvement of threshold current density and characteristic temperature. Effect

Active Publication Date: 2012-07-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem that the quantum dot cascade laser based on the strained self-organized growth quantum dot active region can not be lased yet, and some performance indicators of the traditional quantum well active region based quantum cascade laser are not high, it provides The invention provides a quantum dot cascaded laser with a quantum dot intercalation active region structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot cascade laser
  • Quantum dot cascade laser
  • Quantum dot cascade laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] figure 1 It is a schematic diagram of the material structure of a quantum dot cascade laser according to a specific embodiment of the present invention. Such as figure 1As shown, the quantum dot cascade laser of the present invention includes a lower waveguide, a quantum dot active region layer 4 and an upper waveguide sequentially from bottom to top, wherein the quantum dot active region layer 4 is used to provide optical gain, which is the entire quantum dot level The core of the material structure of the connected laser.

[0029] According to the present invention, the quantum dot active region layer 4 is multi-period cascaded, and each period of the multi-period cascaded quantum dot active region layer 4 incl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a quantum dot cascade laser, comprising a lower waveguide, a quantum dot active area layer and an upper waveguide. The quantum dot active area layer is of multi-period cascade, each period comprises multiple quantum wells / barriers and quantum dot intercalations, wherein the multiple quantum wells / barriers are used for regulating energy band structures so as to provide an electronic quantum conveying channel; and the quantum dot intercalations are used for realizing quantum dot participation sub-band lasing. In addition, a quantum well material of the quantum well / barrier is InxGa1-xAs, and x is larger than 0 and smaller than 1; and a quantum barrier material of the quantum well / barrier is InxAl1-yAs, and y is larger than 0 and smaller than 1. According to the quantum dot cascade laser disclosed by the invention, multiple quantum dot intercalations are guided to a suitable position in the quantum dot active area layer so that performance indexes of the quantum dot laser, such as power conversion efficiency, characteristic temperature and threshold density, are greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and in particular relates to a quantum dot cascade laser, in particular to a quantum dot cascade laser with a quantum dot intercalation active region structure. Background technique [0002] Quantum cascade lasers (Quantum Cascade Lasers, QCLs), as a novel semiconductor coherent light source, are the product of the combination of "energy band engineering" and high-precision molecular beam epitaxy growth technology, and their wavelengths can cover environmental protection, communication and other fields Mid- and far-infrared bands with great application value. The core of QCLs, that is, the basic structure of the active region layer is composed of multiple thin layers of compound semiconductors with a thickness of several nanometers. With a sub-band or micro-band structure, electrons make radiative transitions between these discrete quantum states to constitute optical gain....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/34H01S5/343
Inventor 刘峰奇卓宁李路邵烨刘俊岐张锦川王利军王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products