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Semiconductor structure, manufacturing method thereof and operating method

A technique of operation method and manufacturing method, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor device, electric solid-state device, etc., can solve the problems of operability limitation and complicated manufacturing method, etc.

Active Publication Date: 2012-08-01
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the complex structure of this storage device also complicates the manufacturing method
In addition, operability is limited by design

Method used

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  • Semiconductor structure, manufacturing method thereof and operating method
  • Semiconductor structure, manufacturing method thereof and operating method
  • Semiconductor structure, manufacturing method thereof and operating method

Examples

Experimental program
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Embodiment Construction

[0059] Figure 1 to Figure 9 A manufacturing embodiment of the semiconductor structure is shown. Please refer to figure 1 , The conductive layer 4 and the insulating layer 6 are alternately laminated on the substrate 2. The conductive layers 4 are separated from each other by an insulating layer 6. The conductive layer 4 includes polysilicon. In one embodiment, the conductive layer 4 may be doped and then annealed. The conductive layer 4 may also include metal. The insulating layer 6 includes oxide. The substrate 2 has a buried oxide layer 8 thereon. Pattern the conductive layer 4 and the insulating layer 6 to form such figure 2 The laminated structures 10, 12 are shown. The patterning method includes a photolithography process. The laminated structures 10 and 12 each include conductive stripes 14 and insulating stripes 16 that are alternately laminated.

[0060] Please refer to image 3 , A dielectric element 18 is formed on the laminated structures 10 and 12. For examp...

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PUM

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Abstract

The invention discloses a semiconductor structure, a manufacturing method thereof and an operating method. The semiconductor structure comprises a substrate, a first laminated structure, a dielectric element, a lead, a first conductive pad and a second conductive pad, the first laminated structure is formed on the substrate and comprises first conductive stripes and first insulating stripes which are laminated in a staggered manner, the first conductive stripes are separated by the first insulating stripes, the dielectric element is formed on the first laminated structure, the lead is formed on the dielectric element, the first conductive pad and the second conductive pad are formed on the dielectric element, and the first conductive pad and the second conductive pad on opposite sides of the first laminated structure are separated from each other. The operating method of the semiconductor structure includes: applying first voltage to the first conductive pad; and applying second voltage to the second conductive pad.

Description

Technical field [0001] The present invention relates to a semiconductor structure and its manufacturing method and operation method, and particularly relates to a storage device and its manufacturing method and operation method. Background technique [0002] Storage devices are used in many products, such as storage components in MP3 players, digital cameras, computer files, and so on. As applications increase, the demand for storage devices also tends to be smaller in size and larger in storage capacity. In response to this demand, it is necessary to manufacture high-density storage devices. [0003] As the critical size of the device has been reduced to the limit of technology, designers have developed a method to increase the density of storage devices by using three-dimensional stacked storage devices to achieve higher storage capacity while reducing the cost per bit. However, the complicated structure of such a storage device also complicates the manufacturing method. In ad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L21/8247G11C16/04H10B69/00
Inventor 吕函庭陈治平
Owner MACRONIX INT CO LTD