ZnO (zinc oxide) homogeneous pn junction and preparation method of ZnO homogeneous pn junction

A pn junction, n-type technology, applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of ZnO homogeneous pn junctions, such as no patents and scientific research reports, to reduce the preparation cost, simplify the preparation method, The effect of enriching the composition structure

Active Publication Date: 2015-02-04
安徽瑞德磁电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] At present, there are no patents and scientific research reports on the preparation of p-type Sb-doped ZnO nanostructures by electrochemical deposition method and the preparation of ZnO homogeneous pn junctions based on it.

Method used

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  • ZnO (zinc oxide) homogeneous pn junction and preparation method of ZnO homogeneous pn junction
  • ZnO (zinc oxide) homogeneous pn junction and preparation method of ZnO homogeneous pn junction
  • ZnO (zinc oxide) homogeneous pn junction and preparation method of ZnO homogeneous pn junction

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] An n-type Al-doped ZnO thin film with (002) orientation and an Al doping concentration of 3 at.% was deposited on a glass substrate by ion beam sputtering.

[0031] Mix the aqueous solutions of zinc nitrate, hexamethylenetetramine and antimony trichloride with a concentration of 2.5mM, 2.5mM and 0.25mM in a volume ratio of 1:1:1 for a total of 150ml, and adjust the pH value of the mixed solution at 3 with nitric acid. , the mixed solution was heated to 65°C.

[0032] By electrochemical deposition, the glass substrate deposited with n-type Al-doped ZnO film was inserted into the above mixed solution as the working electrode, with Ag / AgCl as the reference electrode and Pt wire as the counter electrode, and the potential of the working electrode was compared to Adjust the reference electrode to -0.65V, deposit for 3 hours, and grow on the n-type Al-doped ZnO thin film to obtain a p-type Sb-doped ZnO nanorod array with a Sb doping concentration of 8.3 at.%, thereby making a...

Embodiment 2

[0036]An n-type Al-doped ZnO thin film with (002) orientation and an Al doping concentration of 3 at.% was deposited on a glass substrate by ion beam sputtering.

[0037] The aqueous solutions of zinc nitrate, hexamethylenetetramine and antimony trichloride with a concentration of 5mM, 5mM, and 0.0625mM were mixed in a volume ratio of 1:1:1 for a total of 150ml, and the pH value of the mixed solution was adjusted to 5 with nitric acid. The mixed solution was heated to 75°C.

[0038] By electrochemical deposition, the glass substrate deposited with n-type Al-doped ZnO film was inserted into the above mixed solution as the working electrode, with Ag / AgCl as the reference electrode and Pt wire as the counter electrode, and the potential of the working electrode was compared to Adjust the reference electrode to -1.05V, deposit for 30 minutes, and grow on the n-type Al-doped ZnO thin film to obtain a p-type Sb-doped ZnO nanorod array with a Sb doping concentration of 0.9 at.%, ther...

Embodiment 3

[0042] An n-type Al-doped ZnO thin film with (002) orientation and an Al doping concentration of 3 at.% was deposited on a glass substrate by ion beam sputtering.

[0043] The aqueous solutions of zinc nitrate, hexamethylenetetramine and antimony trichloride with concentrations of 5mM, 2.5mM and 0.125mM were mixed in a volume ratio of 1:1:1 for a total of 150ml, and the pH value of the mixed solution was adjusted to 7 with ammonia water. The mixed solution was heated to 90°C.

[0044] By electrochemical deposition, the glass substrate deposited with n-type Al-doped ZnO film was inserted into the above mixed solution as the working electrode, with Ag / AgCl as the reference electrode and Pt wire as the counter electrode, and the potential of the working electrode was compared to Adjust the reference electrode to -0.8V, deposit for 6 hours, and grow on the n-type Al-doped ZnO thin film to obtain a p-type Sb-doped ZnO nanorod array with a Sb doping concentration of 4.8 at.%, thereb...

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Abstract

The invention discloses a ZnO (zinc oxide) homogeneous pn junction and a preparation method of the homogeneous pn junction, wherein the ZnO homogeneous pn junction is formed by a p-type Sb-doped ZnO nano rod array and an n-type Al-doped ZnO film; the doping density of Sb in the p-type Sb-doped ZnO nano rod is 0.9-8.3at.%, and the doping density of Al in the n-type Al-doped ZnO film is 3at.%. The ZnO homogeneous pn junction is prepared by a method of ion beam sputtering combined with electrochemical deposition; the Sb-doped ZnO nano rod is prepared by an electrochemical deposition technology for the first time and is used as a p area of the ZnO homogeneous junction; the composition structure of the ZnO homogeneous junction is enriched; the preparation method of the ZnO homogeneous junction is simplified, and the preparation cost is greatly reduced.

Description

1. Technical field [0001] The invention relates to a ZnO homogeneous pn junction and a preparation method thereof, in particular to a Sb-doped ZnO nanorod array involving a p region and an electrochemical deposition method thereof. 2. Background technology [0002] ZnO is a non-toxic and low-cost II-VI semiconductor material with direct bandgap and wide band gap. The band gap at room temperature is 3.37eV, and it has a large exciton binding energy (~60meV). It has broad application prospects in the fields of electricity and gas sensing, especially as a preferred material for blue and ultraviolet photoelectric devices. [0003] To realize the wide application of ZnO in the optoelectronic field, one of the challenges is to realize the p-type doping of ZnO. Intrinsic ZnO is a polar semiconductor and is naturally n-type. It is relatively easy for donor doping, but difficult for acceptor doping. The ZnO p Type doping can also be done by means of donor-acceptor co-doping to ach...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/22H01L21/36
Inventor 苏海林梁金坤吴玉程黄荣俊
Owner 安徽瑞德磁电科技有限公司
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