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Radiographic imaging device, radiographic imaging display system, and transistor

A technology of radiographic imaging and transistors, which is applied in the field of transistors, can solve problems such as threshold voltage shifts, achieve the effects of suppressing threshold voltage shifts, improving reliability, and suppressing characteristic degradation

Inactive Publication Date: 2017-07-14
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, in the case where the transistor adopts a double-gate structure, the threshold voltage Vth still shifts to a considerable extent due to the influence of holes generated in the silicon oxide film due to radiation irradiation.

Method used

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  • Radiographic imaging device, radiographic imaging display system, and transistor
  • Radiographic imaging device, radiographic imaging display system, and transistor
  • Radiographic imaging device, radiographic imaging display system, and transistor

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Experimental program
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Effect test

no. 2 approach

[0148] configuration

[0149] Figure 13 It is a cross-sectional view showing a rough arrangement of a transistor 111D according to the second embodiment of the present invention. Note that in the transistor 111D described below, each constituent element that is the same as the corresponding element employed in the above-described first embodiment is denoted by the same reference numeral as the corresponding element, and description of the same constituent elements is appropriately omitted. Further, like the transistor 111B of the first embodiment, the pixel circuit 12 a of the pixel unit 12 employed in the radiation imaging device according to the first embodiment includes the transistor 111D and the photodiode 111A of the second embodiment.

[0150] Much like the transistor 111B of the first embodiment described above, the transistor 111D is a transistor of a double-gate structure including the semiconductor layer 126 between the gate 120A and the gate 120B. Also, each of ...

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Abstract

Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to, and claims priority from, Japanese Patent Application JP2011-127598 filed with the Japan Patent Office on June 7, 2011, and Japanese Patent Application JP2012-000956 filed with the Japan Patent Office on January 6, 2012 , which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a radiographic apparatus suitable for X-ray imaging operations generally used in medical care and non-destructive testing, and to a radiographic display system using the apparatus and a transistor employed in the apparatus and the system . Background technique [0004] In recent years, technology using a CCD (Charge Coupled Device) image sensor and / or a CMOS (Complementary Metal Oxide Semiconductor) image sensor is the mainstream of photoelectric conversion-based imaging technology. Photoelectric conversion-based imaging technology ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/40H01L27/146G01T1/20
CPCH01L27/146H01L27/14623H01L27/14632H01L27/14643H01L27/14663H01L27/14676H01L29/78633H01L29/7831
Inventor 山田泰弘伊藤良一田中勉高德真人千田满
Owner SONY SEMICON SOLUTIONS CORP
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