Exhaust method, exhaust apparatus and substrate treatment equipment

A technology of substrate processing equipment and exhaust method, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of increasing equipment design and manufacturing costs, pollution, substrate holding part and partition structure Complicated problems, to achieve the effect of improving uniformity and providing uniformity

Active Publication Date: 2012-12-19
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

However, due to the complex structure of the substrate holding part and the spacer in this technical solution, the film attached to the complex mechanism is easy to fall off and form particle pollution.
Moreover, the design scheme of the above-mentioned baffle device has a great correlation with the volume of the chamber, and the gas distribution effect produced whe

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  • Exhaust method, exhaust apparatus and substrate treatment equipment
  • Exhaust method, exhaust apparatus and substrate treatment equipment
  • Exhaust method, exhaust apparatus and substrate treatment equipment

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Embodiment Construction

[0050] In order for those skilled in the art to better understand the technical solution of the present invention, the exhaust method, device and substrate processing equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0051] The exhaust method provided by the present invention is used to cooperate with the substrate processing chamber to perform exhaust operation. see figure 1 , is a schematic flow chart of the exhaust method provided by the present invention.

[0052] The method comprises the following steps: 10) providing at least two exhaust ports for the substrate processing chamber, and making the exhaust rate of each exhaust port independently controllable; 20) making the at least two exhaust ports operate at different Exhaust rate Exhaust outward. In this way, with the help of the above-mentioned at least two exhaust ports whose exhaust rates can be independently controlled, airflows in multiple...

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Abstract

The invention provides an exhaust method, an exhaust apparatus and substrate treatment equipment, wherein the exhaust method comprises the following steps of 10) arranging at least two exhaust ports for a substrate treatment chamber, and enabling exhaust rate of each exhaust port to controlled individually, and 20) making each exhaust port exhaust outward at different exhaust rate; the exhaust apparatus comprises at least two exhaust ports connected to the substrate treatment chamber, with exhaust rate of each exhaust port capable of being controlled individually; and the substrate treatment equipment comprises the substrate treatment chamber and is provided with the exhaust apparatus provided by the invention. All the exhaust method, the exhaust apparatus and the substrate treatment equipment can effectively increase uniformity of air flow distribution in the substrate treatment chamber during a substrate treatment process, thereby improving the uniformity of the process quality.

Description

technical field [0001] The present invention relates to the technical field of microelectronic processing, in particular to an exhaust method and device and substrate processing equipment using the above exhaust method or device. Background technique [0002] In the manufacturing process of microelectronic products, it is necessary to carry out various thin film preparation processes on the surface of the substrate. Among them, there is a commonly used chemical vapor deposition (Chemical Vapor Deposition, hereinafter referred to as CVD) process, which is a thin film preparation technology that utilizes the chemical reaction of the process gas to form a desired film layer on the surface of the substrate. Film layers with various characteristics and uses such as crystalline film, amorphous film, insulating film, conductive film and protective film can be prepared by using this process. [0003] In the CVD process, whether the process gas can fully and uniformly contact the su...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/44
CPCC23C16/4412C23C16/44C23C16/455
Inventor 古村雄二张建勇周卫国徐亚伟
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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