First packaged and then etched packaging structure with multiple chips reversedly installed and base islands buried and preparation method of structure

Abstract

The invention relates to a first packaged and then etched packaging structure with multiple chips reversedly installed and base islands buried and a preparation method of the structure. The packaging structure comprises base islands (1), pins (2) and a plurality of chips (3), wherein the chips are reversedly installed on the front faces of the base islands and the front faces of the pins; underfills (14) are arranged among the bottoms of the chips, the fronts of the base islands and the pins; plastic package materials (4) are arranged in the peripheral regions of the base islands, the regions between the base islands and the pins, the regions between the pins, the regions on the upper parts of the base islands and the pins and the regions on the lower parts of the base islands and the pins and on the peripheries of the chips; small holes (5) are formed on the plastic package materials at the backs of the pins and are communicated with the backs of the pins; and metal balls (7) are arranged in the small holes and are contacted with the backs of the pins. The packaging structure and the preparation method have the following beneficial effects that the preparation cost is reduced; the safety and reliability of the packaging body are improved; environmental pollution is reduced; and design and preparation of high-density circuits are truly achieved.

Description

technical field [0001] The invention relates to a multi-chip flip-chip packaging structure and a manufacturing method thereof. It belongs to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 28 , take a substrate made of glass fiber material, [0004] Step two, see Figure 29 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 30 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 31 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 32 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 33 , coated with a photoresist film on the surface of the glass fiber substrate, [0009...

AI Technical Summary

Problems solved by technology

[0019] 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (etching factor: minimum The best manufacturing capability is that the etching gap is approximately equal to the thickness of the object being etched, see Figure 40 ), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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