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Thermoset Die Bonding Film
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A die-bonding film and thermosetting technology, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.
Active Publication Date: 2016-01-20
NITTO DENKO CORP
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Abstract
Description
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Problems solved by technology
[0014] The inventors of the present invention have studied a thermosetting die-bonding film, a dicing / die-bonding film including the thermosetting die-bonding film, and a method of manufacturing a semiconductor device in order to solve the aforementioned conventional problems.
Method used
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Embodiment 1）
[0134] Trishydroxyphenylmethane-type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY) 12 parts by weight, xylylene novolak-type phenolic resin (manufactured by Meiwa Kasei Co., Ltd., trade name: MEH7800H) ) 4 parts by weight, acrylic copolymer (manufactured by Nogawa Chemical Co., Ltd., trade name: Rebital AR31) 36 parts by weight, spherical silica (manufactured by Admatetsu Co., Ltd., trade name; SO-E2, maximum particle size) as a filler material 1.4 μm, average particle size 0.5 μm) 40 parts by weight were dissolved in methyl ethyl ketone to prepare an adhesive composition with a concentration of 15.0 wt%.
[0135] The solution of the adhesive composition was coated on a release-treated film made of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment as a release liner, and then at 130 °C for 2 minutes. Thus, a thermosetting die-bonding film A having a thickness of 5 μm was produced.
Embodiment 2）
[0137] Trishydroxyphenylmethane-type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY) 4 parts by weight, xylylene novolak-type phenolic resin (manufactured by Meiwa Kasei Co., Ltd., trade name: MEH7800H) ) 4 parts by weight, acrylic copolymer (manufactured by Nogawa Chemical Co., Ltd., trade name: レビタル AR31) 12 parts by weight, spherical silica (manufactured by Admatetsu Co., Ltd., trade name; SO-E2, maximum particle size) as a filler 1.4 μm, average particle size 0.5 μm) 80 parts by weight were dissolved in methyl ethyl ketone to prepare an adhesive composition with a concentration of 15.0 wt%.
[0138] The solution of the adhesive composition was coated on a release-treated film made of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment as a release liner, and then at 130 °C for 2 minutes. Thus, a thermosetting die-bonding film B having a thickness of 5 μm was produced.
Embodiment 3）
[0140] Trishydroxyphenylmethane-type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY) 12 parts by weight, xylylene novolak-type phenolic resin (manufactured by Meiwa Kasei Co., Ltd., trade name: MEH7800H) ) 12 parts by weight, acrylic copolymer (manufactured by Nogawa Chemical Co., Ltd., trade name: Rebital AR31) 36 parts by weight, spherical silica (manufactured by Admatetsu Co., Ltd., trade name; SO-E2, maximum particle size) as a filler 1.4 μm, average particle size 0.5 μm) 40 parts by weight were dissolved in methyl ethyl ketone to prepare an adhesive composition with a concentration of 15.0 wt%.
[0141] The solution of the adhesive composition was coated on a release-treated film made of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment as a release liner, and then at 130 °C for 2 minutes. Thus, a thermosetting die-bonding film C having a thickness of 3 μm was produced.
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Abstract
The present invention provides a thermosetting die-bonding film capable of preventing local stress from being applied to the semiconductor chip by a filler when bonding a semiconductor chip to an adherend through the thermosetting die-bonding film, thereby reducing breakage of the semiconductor chip And a dicing / die-bonding film including the thermosetting die-bonding film. The thermosetting die-bonding film of the present invention contains an adhesive composition and a filler containing fine particles, wherein the thickness of the thermosetting die-bonding film is Y (μm), and the maximum particle diameter of the filler is For X (μm), the ratio X / Y(-) is 1 or less.
Description
technical field [0001] The present invention relates to a thermosetting die-bonding film used when adhesively fixing, for example, a semiconductor chip to an adherend such as a substrate or a lead frame. Moreover, this invention relates to the dicing die-bonding film which laminated|stacked this thermosetting type die-bonding film and a dicing film. In addition, the present invention relates to a method of manufacturing a semiconductor device using the dicing / die-bonding film. Background technique [0002] Conventionally, in the manufacturing process of a semiconductor device, silver paste has been used when fixing a semiconductor chip on a lead frame or an electrode member. The fixing process is performed by applying a paste-like adhesive on a die pad of a lead frame, etc., mounting a semiconductor chip thereon, and curing the paste-like adhesive layer. [0003] However, the slurry adhesive has large variations in coating amount, coating shape, etc. due to its viscosity b...
Claims
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Application Information
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