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Method for determining single-event upset rate on basis of historical data

A technology of single-particle flipping and historical data, applied in the field of determining the single-particle flipping rate, can solve the problems of cumbersome calculation process and unfavorable engineering application, and achieve the effect of simplifying the calculation process

Inactive Publication Date: 2013-03-13
BEIJING SHENGTAOPING TEST ENG TECH RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, the calculation process using the above method is cumbersome, which is not conducive to the application of engineering

Method used

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  • Method for determining single-event upset rate on basis of historical data
  • Method for determining single-event upset rate on basis of historical data
  • Method for determining single-event upset rate on basis of historical data

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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0027] The present invention proposes a method for determining the single event turnover rate based on historical data. The method uses data from both the figure of merit (FOM) and engineering experience, wherein the determination of the figure of merit is based on the history of the device. Test Data. The method determines the single event turnover rate of the device by the following formula:

[0028] Rate=C×FOM,

[0029] Among them, Rate is the single event turnover rate of the device; C is the empirical coefficient, which is determined by factors such as the radiation environment of the device orbit and the reinforcement of the device itself; FOM is the quality factor.

[0030] The FOM is obtained by the following formula:

[0031] FOM = ...

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Abstract

The invention provides a method for determining the single-event upset rate on the basis of historical data. The method determines the single-event upset rate of a device by a following formula: Rate is equal to C*FOM, wherein the Rate is the single-event upset rate of the device; C is an empirical coefficient; FOM is a quality factor; SigmaHL is the saturated section of the device caused by heavy ions; and L0.25 is an energy linear transfer value corresponding to the 25% position of the saturated section in an energy linear transfer-section curve of the device. The method provided by the invention has the advantages that by combination of the test data and the engineering experience, the calculation process of the single-event upset rate is simplified and the application for engineering is convenient.

Description

technical field [0001] The invention relates to the field of space radiation, in particular to a method for determining the turnover rate of a single event based on historical data. Background technique [0002] In the complex and harsh space radiation environment, the single event effect of the device will occur, causing the logic state of the circuit to flip from "0" to "1". The determination of the acceptable risk and achievable capability in the algorithm process of the space radiation environment reliability index system for single event effects can be calculated using the existing historical experience data. [0003] In the prior art, an RPP (rectangular parallelpiped) method and an IRPP (integrated rectangular parallelepiped) method are used to calculate the single event turnover rate of a device. [0004] RPP method: λ = A 4 ∫ LET Min ...

Claims

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Application Information

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IPC IPC(8): G06F19/00
Inventor 王群勇陈冬梅冯颖阳辉钟征宇陈宇白桦
Owner BEIJING SHENGTAOPING TEST ENG TECH RES INST
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