Semiconductor devices with self-heating structures, methods of manufacture thereof, and testing methods

Abstract

Semiconductor devices with self-heating structures, methods of manufacture thereof, and testing methods are disclosed. In one embodiment, a semiconductor device includes a workpiece, an active electrical structure disposed over the workpiece, and at least one self-heating structure disposed proximate the active electrical structure.

Description

technical field [0001] The present invention relates to a semiconductor device. Background technique [0002] Semiconductor devices can be used in various electronic applications such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor material layers over a semiconductor substrate and patterning the different material layers using photolithographic techniques to form circuit components and elements thereon. [0003] Metal Oxide Semiconductor (MOS) devices often require Wafer Acceptance Tests (WATs). For lifetime testing, part of the Wafer Acceptance Test involves heating the MOS device with an external circuit to test the operation of the wafer at elevated temperatures. Parameter (operating parameter). For example, semiconductor wafers sometimes require WAT at elevated temperatures for reliability ...

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Problems solved by technology

This requires the WAT team staff (team operator) to change the WAT probe card in the WAT tool and raise the temperature in the WAT tool to a higher temperature, which takes time

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