A single-side polishing process for solar monocrystalline silicon cells
A single-crystal silicon cell, single-sided polishing technology, applied in polishing composition, circuit, crystal growth and other directions, can solve the problems of large pollution in chain acid polishing, too thin silicon wafer, difficult to control, etc., to achieve convenient adjustment of polishing liquid , The effect of low silicon wafer thinning and no etching process
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Embodiment 1
[0019] (1) Pre-process: Firstly, the monocrystalline silicon wafer is pre-cleaned in a NaOH solution with a temperature of 80°C and a mass concentration of 14% for 30 seconds to remove the damaged layer on the surface of the silicon wafer, and then wash it with pure water. Then carry out texturing in the texturing liquid to form a pyramid textured structure on the front and back of the monocrystalline silicon wafer, and wash and dry with pure water; the composition and mass percentage of each component of the texturing liquid are: 1.2% NaOH, 0.2% Na 2 SiO 3 , 3% isopropanol, the balance of water; the temperature of the texture is controlled at 80 ℃, and the time is 15min. Phosphorus is then diffused on the front of the single crystal silicon wafer to form an n-type emitter with a diffusion resistance range of 70R □ ; Clean the phosphosilicate glass on the surface of the single crystal silicon wafer with HF solution with a volume concentration of 10%, and dry it; finally, dep...
Embodiment 2
[0023] This embodiment is the same as Embodiment 1, except that the back polishing time is 10 minutes.
Embodiment 3
[0025] This embodiment is the same as Embodiment 1, except that the back polishing time is 15 minutes.
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