Single-side polishing process of solar monocrystalline silicon battery

A single-crystal silicon cell, single-side polishing technology, applied in polishing compositions, circuits, crystal growth and other directions, can solve the problems of too thin silicon wafers, difficult to control, large pollution in chain acid polishing, etc., without etching process. , The effect of low silicon wafer thinning and low equipment cost

Active Publication Date: 2013-03-13
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that double-sided polishing is too large for the thinning of single crystal silicon wafers, resulting in too thin silicon wafers; the problem of difficult control of the reaction of the chain-type single-sided alkali polishing polishing solution; the chain-type acid po

Method used

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  • Single-side polishing process of solar monocrystalline silicon battery

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Embodiment 1

[0020] (1) Pre-process: Firstly, the monocrystalline silicon wafer is pre-cleaned in a NaOH solution with a temperature of 80°C and a mass concentration of 14% for 30 seconds to remove the damaged layer on the surface of the silicon wafer, and then wash it with pure water. Then carry out texturing in the texturing liquid to form a pyramid textured structure on the front and back of the monocrystalline silicon wafer, and wash and dry with pure water; the composition and mass percentage of each component of the texturing liquid are: 1.2% NaOH, 0.2% Na 2 SiO 3 , 3% isopropanol, the balance of water; the temperature of the texture is controlled at 80 ℃, and the time is 15min. Phosphorus is then diffused on the front of the single crystal silicon wafer to form an n-type emitter with a diffusion resistance range of 70R □ ; Clean the phosphosilicate glass on the surface of the single crystal silicon wafer with HF solution with a volume concentration of 10%, and dry it; finally, dep...

Embodiment 2

[0024] This embodiment is the same as Embodiment 1, except that the back polishing time is 10 minutes.

Embodiment 3

[0026] This embodiment is the same as Embodiment 1, except that the back polishing time is 15 minutes.

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Abstract

The invention discloses a single-side polishing process of a solar monocrystalline silicon battery and aims at solving problems that silicon chips are too thin due to the fact that thickness reduction of monocrystalline silicon chips is over-large by means of double-side polishing, reaction of chained single-side alkaline polishing solutions is difficult to control, chained acid polishing is severe in pollution, and wastewater treatment is difficult. The single-side polishing process comprises three main steps of a former process, a back-side polishing and silk-screen printing and sintering, and the single-side polishing process has the advantages that the polishing solutions are free from metal ion pollution, thickness reduction of the silicon chips is low, an etching process is not required, the polishing solutions are convenient to adjust, and costs of devices are low.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a single-side polishing process for solar monocrystalline silicon cells. Background technique [0002] In the production of conventional solar crystalline silicon cells, the back surface is generally treated by texturing or polishing. The back polishing has attracted the attention of various companies because of the following advantages: 1) The reflectivity of the back surface is increased, which improves the long-wavelength light on the cell. 2) Improving the back contact, the aluminum powder particles in the conductive aluminum paste used on the back of the battery in the conventional battery process are about 5-20 μm, and the size of the pyramid texture formed after the silicon wafer is textured is 1-5μm, when the aluminum powder is in contact with the back of the battery, due to the overhead effect of the pyramid, the contact area is small. If the back is change...

Claims

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Application Information

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IPC IPC(8): H01L31/18C30B33/10C09G1/18
CPCY02P70/50
Inventor 韩健鹏吴敏吕绍杰
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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