Device and method for overburden electroplating copper layer on chemical corrosion TSV (through silicon via) surface

Abstract

The invention provides a device and a method for an overburden electroplating copper layer on a chemical corrosion TSV (through silicon via) surface. The device comprises a distance measurement sensor, a corrosive liquid inlet and a corrosive liquid outlet. The distance measurement sensor is arranged in a copper corrosion groove and is used for measuring liquid level in the groove, and the corrosive liquid inlet and outlet are arranged at the bottom of the copper corrosion groove and are used for mounting an inlet valve and an outlet valve respectively. The device further comprises a mechanical arm rod for holding a wafer and soaking the surface of the wafer subjected to TSV electroplating in corrosive liquid in the copper corrosion groove. The distance measurement sensor, the inlet valve, the outlet valve and a controller for the mechanical arm rod are all connected to a master controller or computer. The device and the method for the overburden electroplating copper layer on the chemical corrosion TSV surface have the advantages that based on the thought of removing a superficial over-thick copper layer by combining chemical corrosion copper with the CMP (chemical mechanical polishing) process, a simple device for etching copper by a chemical wet method is designed. The problem of TSV overburden electroplating can be solved effectively, a majority of copper is removed by a method of wet-method corrosion copper to relieve load for the CMP copper process, and cost is reduced.

Description

technical field [0001] The invention relates to a device and method for chemically corroding an overelectroplated copper layer on a through-silicon hole surface, and belongs to the technical field of wafer-level electroplating copper hole filling. Background technique [0002] At present, TSV vertical interconnection technology has been more and more widely used in the field of microelectronic packaging, and TSV electroplating copper filling technology is an indispensable link in the TSV process. TSV electroplating and filling will inevitably cause copper overplating (overburden) on the surface of the wafer. ). Due to the influence of factors such as the ratio of various additives and time settings, the copper on the surface of the wafer after electroplating is over-plated, and the thickness of the copper layer on the surface varies. Moreover, because the cleanliness of the wafer surface cannot be completely guaranteed, wafers with particle contamination , will cause additi...

AI Technical Summary

Problems solved by technology

Due to the influence of factors such as the ratio of various additives and time settings, the copper on the surface of the wafer after electroplating is over-plated, and the thickness of the copper layer on the surface varies. Moreover, because the cleanliness of the wafer surface cannot be completely guaranteed, the wafer with particle contamination , will cause additional raised crystallization on the wafer surface

These conditions will cause the surface copper after electroplating to be too thick, which will bring additional burden to the subsequent chemical mechanical polishing (CMP) process, which will not only increase the cost, but also bring challenges to the CMP process

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