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High duty cycle ddr2 digital delay chain circuit

A delay chain, duty cycle technology, applied in high-speed DDR, DDR3 digital circuit design, DDR2 field, can solve the problem of low frequency of digital delay chain application

Active Publication Date: 2015-09-16
KUNSHAN HUINING ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Technical problem: the purpose of the invention is to solve the technical problems mentioned in the above-mentioned background, provide a kind of high duty cycle DDR2 digital delay chain circuit, solve existing DDR2 digital delay chain clock duty cycle problem, improve the working frequency of DDR2
[0006] Technical solution: the object of the present invention is to propose a high duty cycle DDR2 digital delay chain circuit for the problem of the clock duty cycle generated by the existing DDR2 digital delay chain circuit and the low application frequency of the existing digital delay chain circuit

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Embodiment Construction

[0038] The present invention will be described in detail below with reference to the drawings and specific embodiments. In this paper, a 128-level digital delay chain is used. The DDR2 system clock cycle is 3.75ns, the frequency is 266Mhz, the DDR2 memory is 533Mhz, the bit width of the DDR2 system configurable phase offset register is 8 bits, and the delay of each digital delay unit is 0.1ns. The initial delay stages of the clock-locked digital delay chain are 11. As an embodiment, the described embodiment is only one embodiment of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0039] The implementation of the present invention discloses a high duty ratio DDR2 digital delay chain circuit, comprising: a digital delay unit, a clock-locked digital delay chain, a write oper...

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Abstract

The invention discloses a high-duty-ratio DDR2 digital delay chain circuit. The high-duty-ratio DDR2 digital delay chain circuit comprises a digital delay unit, a write operation clock digital delay chain, and a read-write operation DQS (data strobe signal) digital delay chain, wherein the digital delay unit consists of a clock inverter and a clock selector; and both of the write operation clock digital delay chain and the read-write operation DQS digital delay chain consist of digital delay units in series connection. The high-duty-ratio DDR2 digital delay chain circuit provided by the invention is realized by selecting a full digital circuit so as not to depend on the chip manufacture process, and can realize high-duty-ratio DDR2 write clock and DQS signals, thereby improving the stability and work frequency of DDR2.

Description

technical field [0001] The invention relates to a DDR2 digital delay chain circuit with a high duty ratio, and belongs to the design field of high-speed DDR, DDR2, and DDR3 digital circuits. Background technique [0002] With the continuous development of integrated circuits and the continuous updating of technology, the clock frequency of the chip continues to increase, and the data throughput of the chip continues to increase. The duty cycle balance of the synchronous clock signal is very important to ensure the timing performance of the circuit, so that in today's design When using chips, DDR2 needs to have more precise clock precision and faster clock frequency. [0003] Traditional digital delay chain circuits generally adopt a digital-analog hybrid design method, which is limited to a specific process, and the design flexibility is not high, especially in the deep submicron chip process. The impact of changes in the latch circuit is obvious, and there are relatively l...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/4063
Inventor 吕新浩孙翼高鹏马涛
Owner KUNSHAN HUINING ELECTRIC
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