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High-duty-ratio DDR2 (double data rate) digital delay chain circuit

A delay chain, duty cycle technology, applied in high-speed DDR, DDR3 digital circuit design, DDR2 field, can solve the problem of low frequency of digital delay chain application

Active Publication Date: 2013-04-17
KUNSHAN HUINING ELECTRIC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Technical problem: the purpose of the invention is to solve the technical problems mentioned in the above-mentioned background, provide a kind of high duty cycle DDR2 digital delay chain circuit, solve existing DDR2 digital delay chain clock duty cycle problem, improve the working frequency of DDR2
[0006] Technical solution: the object of the present invention is to propose a high duty cycle DDR2 digital delay chain circuit for the problem of the clock duty cycle generated by the existing DDR2 digital delay chain circuit and the low application frequency of the existing digital delay chain circuit

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Embodiment Construction

[0038] The present invention will be described in detail below with reference to the drawings and specific embodiments. This article uses a 128-level digital delay chain, DDR2 system clock cycle is 3.75ns, frequency is 266Mhz, DDR2 memory is 533Mhz, DDR2 system configurable phase offset register bit width is 8 bits, each level of digital delay unit delay is 0.1ns, The initial delay level of the clock-locked digital delay chain is 11. As an example, the described example is only an example of the present invention, and not all examples. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0039] The present invention discloses a high duty cycle DDR2 digital delay chain circuit, which includes a digital delay unit, a clock locked digital delay chain, a write operation clock digital delay chain, a write operation DQS digital dela...

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Abstract

The invention discloses a high-duty-ratio DDR2 digital delay chain circuit. The high-duty-ratio DDR2 digital delay chain circuit comprises a digital delay unit, a write operation clock digital delay chain, and a read-write operation DQS (data strobe signal) digital delay chain, wherein the digital delay unit consists of a clock inverter and a clock selector; and both of the write operation clock digital delay chain and the read-write operation DQS digital delay chain consist of digital delay units in series connection. The high-duty-ratio DDR2 digital delay chain circuit provided by the invention is realized by selecting a full digital circuit so as not to depend on the chip manufacture process, and can realize high-duty-ratio DDR2 write clock and DQS signals, thereby improving the stability and work frequency of DDR2.

Description

Technical field [0001] The invention relates to a high-duty ratio DDR2 digital delay chain circuit, and belongs to the field of high-speed DDR, DDR2, and DDR3 digital circuit design. Background technique [0002] With the continuous development of integrated circuits and the continuous updating of technology, the clock frequency of the chip is continuously improved, and the data throughput of the chip is continuously increased. The duty cycle balance of the synchronous clock signal is very important to ensure the timing performance of the circuit. When it comes to chips, DDR2 needs to have more precise clock accuracy and faster clock frequency. [0003] The traditional digital delay chain circuit generally adopts a digital-analog hybrid design method, which is limited to a specific process, and the design flexibility is not high. Especially in the deep submicron chip process, there is a temperature reversal problem. The traditional digital-analog hybrid delay The impact of the cha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/4063
Inventor 吕新浩孙翼高鹏马涛
Owner KUNSHAN HUINING ELECTRIC
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