Substrate cooling system, substrate processing device, electrostatic chuck, and substrate cooling method
A substrate processing device and electrostatic chuck technology are applied to holding devices, circuits, electrical components, etc. where electrostatic attraction is applied, which can solve the problems of expensive He gas, inability to obtain substrate cooling effect, etc., and achieve the effect of sufficient cooling effect.
Active Publication Date: 2016-08-03
TOKYO ELECTRON LTD
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- Application Information
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Problems solved by technology
In addition, since He gas is generally expensive, if He gas is used as a temperature adjustment gas in a substrate processing apparatus that performs plasma processing on a substrate for FPD, the cooling effect on the substrate commensurate with the cost cannot be obtained.
Method used
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Embodiment
[0086] Next, examples of the present invention will be described.
[0087] First, as Example 1, in the substrate processing apparatus 10 having a plurality of protrusions 14b on the suction surface 14a, N 2 The gas is used as the temperature adjustment gas, the thickness t of the heat conduction space T is set to 50 μm, and the heat conduction space T is supplied with N 2 The supply pressure of the gas is set to 2Torr (267Pa), and the O 2 The gas was introduced into the processing space S, the pressure of the processing space S was adjusted to 50mTorr (6.7Pa), and 4500W high-frequency power was supplied from the high-frequency power supply 20 to the processing space S for 120 seconds, and the plasma etching process was performed on the substrate G. In this case, the temperature of the center part and peripheral part of the board|substrate G was measured, and it shows in Table 7 below.
[0088] In addition, as Example 2, in addition to supplying N to the heat conduction space...
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Abstract
The invention provides a substrate cooling system, a substrate processing apparatus, an electrostatic chuck and a substrate cooling method, wherein the cooling effect is perfectly ideal and worthy of the cost of substrates, even for large glass substrates of a larger volume resistivity. The substrate cooling system of a substrate processing apparatus (10) comprises a base (12) used for loading a substrate (G). The electrostatic chuck (14) is arranged at the upper part of the base (12) and the substrate (G) is absorbed onto the electrostatic chuck (14) through electrostatic adsorption. Temperature adjusting gas is supplied to a heat conducting space (T) between the substrate (G) absorbed onto the electrostatic chuck (14) and the electrostatic chuck (14) by means of a gas flow path (18) and a temperature adjusting gas supplying unit (19). The thickness of the heat conducting space (T) is smaller than 50 mu m. The temperature adjusting gas supplied to the heat conducting space (T) is composed of nitrogen or oxygen with the pressure thereof below 3Torr (400Pa).
Description
technical field [0001] The present invention relates to a substrate cooling system, a substrate processing device, an electrostatic chuck, and a substrate cooling method for cooling a relatively large substrate placed on a substrate mounting table. Background technique [0002] In the manufacturing process of relatively large FPDs (Flat Panel Displays) represented by liquid crystal display devices (LCDs), for example, FPDs of the seventh generation or later, it is known that a predetermined process such as plasma is applied to a substrate for an FPD. processing substrate processing equipment. [0003] This substrate processing apparatus includes a substrate mounting table for mounting a substrate in a processing chamber (hereinafter referred to as a "chamber"), and an upper electrode arranged to face the substrate mounting table across a processing space. High-frequency power (RF) for generating plasma is supplied to the substrate stage so that the substrate stage functions...
Claims
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IPC IPC(8): H01L21/67H01L21/683
CPCH01L21/67109H01L21/6833H02N13/00
Inventor 古屋敦城
Owner TOKYO ELECTRON LTD