Semiconductor device with conductive bump, package structure and manufacturing method
A technology of conductive bumps and packaging structures, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of empty welding in the peripheral area, short circuit and open circuit in the central area of the chip, and avoid bridging. Short circuit, improved yield and high reliability
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no. 1 example
[0056] Such as Figure 5A As shown, a substrate 501 having a solder pad 502 on the surface is provided, and the substrate 501 also has a protective layer 503 covering the surface and exposing part of the surface of the solder pad 502. The substrate referred to in the embodiment of the present invention may be a wafer, a chip or a circuit board, or even any substrate used for soldering.
[0057] Such as Figure 5B As shown, a metal layer 504 is formed on the surface of the protective layer 503 and the exposed pad 502 by sputtering.
[0058] in Figure 5C and Figure 5D In the steps shown, a first resist layer 505 is formed on the metal layer 504, and a first opening 506 corresponding to the position of the bonding pad 502 is formed.
[0059] in Figure 5E In the step shown, a first conductive pillar 507 is formed by electroplating on the surface of the metal layer 504 in the first opening 506.
[0060] in Figure 5F and Figure 5G In the step shown, a second resist layer 508 is formed ...
no. 2 example
[0067] Such as Figure 6A As shown, a substrate 601 with a solder pad 602 on the surface is provided, and the substrate 601 also has a protective layer 603 covering the surface and exposing a part of the surface of the solder pad 602.
[0068] Such as Figure 6B As shown, a metal layer 604 is formed on the surface of the protective layer 603 and the exposed pad 602 by sputtering.
[0069] Such as Figure 6C and Figure 6D As shown, a first resist layer 605 is formed on the metal layer 604, and a first opening 606 corresponding to the position of the bonding pad 602 is formed. As shown in FIG. 6D', the first resist layer 605 covers a part of the surface of the metal layer 604. Generally, the size of the first opening 606 is smaller than the area of the bonding pad 602.
[0070] Such as Figure 6E and Figure 6E As shown, a first conductive pillar 607 is formed on the surface of the metal layer 604 in the first opening 606, so that the first conductive pillar 607 constitutes the cond...
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