Drawing method for C-shaped silicon core

Abstract

The invention discloses a drawing method for a C-shaped silicon core, wherein in the method, a crucible (5) and a heating sleeve (6) used for melting a crystal (7), and a die plate (11) structure for drawing the C-shaped silicon core (2) are provided. The drawing method comprises the following steps of: A, previous preparation, B, melting for the materials of the crystal (7), C, control for the silicon core, and D, finishing for the C-shaped silicon core (2), wherein many times of drawing for the C-shaped silicon core (2) of a crystal drawing process can be realized by repeating the steps aforementioned. During the subsequent use of the drawing method disclosed by the invention, the disadvantage of small diameter of the existing solid square silicon core or circular silicon core is effectively overcome; the purpose of rapidly growing a polycrystalline rod is realized by the C-shaped silicon core having a weight which is equal to or slightly greater than the weight of the solid silicon core; and the method for drawing the silicon core disclosed by the invention is simple to cost, and capable of greatly saving enterprise cost.

Description

【Technical field】 [0001] The invention relates to a C-shaped silicon core, in particular the invention relates to a method for drawing a C-shaped silicon core of polysilicon or other crystalline materials. 【Background technique】 [0002] It is known that the silicon core bonding technology is a very important technology in the process of producing polysilicon by the Siemens method, and it is mainly used in a link of polysilicon production, that is, the reduction reaction process. The principle of the reduction reaction process is: the reduction reaction is carried out in a closed reduction furnace, and several closed loops are formed by lapping silicon cores in the reduction furnace before loading the furnace, which is the "bridge" in the jargon. "; each closed circuit is formed by two vertical silicon cores and a horizontal silicon core to form a "∏"-shaped structure; the two vertical silicon cores of each closed circuit are respectively connected to two electrodes on the b...

AI Technical Summary

Problems solved by technology

[0007] At present, there are wire-cut square silicon cores on the market. Due to the wire-cutting process, the crystal is subjected to micro-shocks in diamond wire-cutting, so that there are many tiny cracks in the finished square silicon core that are difficult to detect with the naked eye. The instantaneous impact on the cracks is large, which greatly increases the amount of fractures or collapses during the growth of the silicon cores. In the light cases, the group of silicon cores cannot grow, and in severe cases, the furnace will be shut down. Then, large-diameter silicon cores are used for lap joints. The rapid growth of polycrystalline rods and the improvement of the strength of the silicon core itself have become a technical barrier that is difficult for those skilled in the art to overcome; however, how to increase the diameter of the silicon core is also a long-term demand for those skilled in the art

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