Ultraviolet light emitting device

Abstract

The ultraviolet light emitting device includes a substrate; a light emitting structure on the substrate, and including a plurality of compound semiconductors, each including at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer on the first conductive semiconductor layer; and a second electrode layer on the second conductive semiconductor layer. The first electrode layer is spaced apart from a side surface of the active layer, and is provided along a peripheral portion of the active layer. At least one of the first and second electrode layers is a reflective layer.

Description

[0001] Pursuant to 35 U.S.C. §119(a), this application claims Korean Patent Application No. 10-2011-0134019 filed on December 13, 2011 and Korean Patent Application No. 10-2012- filed on November 5, 2012 0124003, the entire contents of which are incorporated herein by reference. technical field [0002] Embodiments relate to light emitting devices. Background technique [0003] Light emitting diodes (LEDs) are semiconductor light emitting devices that convert electrical current into light. [0004] Since semiconductor light emitting devices can obtain light with high luminance, semiconductor light emitting devices have been widely used as light sources for displays, vehicles, or lighting devices. [0005] Recently, ultraviolet light emitting devices capable of outputting ultraviolet light have been proposed. [0006] Although ultraviolet light is output from the ultraviolet light emitting device, a larger amount of ultraviolet light is not output to the outside but is abso...

AI Technical Summary

Problems solved by technology

[0006] Although ultraviolet light is output from the ultraviolet light emitting device, a larger amount of ultraviolet light is not output to the outside but is absorbed or disappears in the ultraviolet light emitting device

Therefore, the light extraction efficiency may be reduced

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