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Five-knot cascade photovoltaic cell with antireflection film

A technology of photovoltaic cells and anti-reflection films, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as increasing transmission, affecting battery energy conversion efficiency, and reducing

Inactive Publication Date: 2015-07-15
LIYANG CITY PRODIVITY PROMOTION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

GaInP / (In)GaAs / InGaAsN / Ge four-crystal lattice-matched cells can theoretically obtain high conversion efficiency, but limited by the difficulty of reducing the defect density of InGaAsN materials, this four-junction cell poses great challenges to material growth.
GaInP / (In)GaAs / InGaAsN / GaAs / Ge five-crystal lattice-matched cells can also theoretically achieve high conversion efficiency, but the current problems are similar to those of four-junction photovoltaic cells
[0004] Moreover, during the photoconversion process of the photovoltaic cell, the loss of reflection reduces the number of incident photons per unit area of ​​the photovoltaic cell, resulting in a decrease in the current density of the photovoltaic cell, thereby affecting the energy conversion efficiency of the battery. In order to improve the photoelectric conversion efficiency of the battery, the battery should be reduced Reflection loss of surface light, increased light transmission

Method used

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  • Five-knot cascade photovoltaic cell with antireflection film

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Experimental program
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Embodiment 1

[0013] like figure 1 As shown, the five-junction cascaded photovoltaic cell with antireflection film proposed by the present invention has the following structure:

[0014] A bottom electrode (14) is set on the lower surface of the InP substrate (1), and a GaAs sub-cell (2) is set on the upper surface of the InP substrate (1); the GaAs sub-cell (2) has a GaInAs sub-cell (2). A battery (3); a GaInP subcell (5) on the GaInAs subcell (3); a strain-compensated GaAsP / GaInAs superlattice cell (6) on the GaInP subcell (5); a strain-compensated GaAsP GaInP sub-cell (9) on the GaInAs superlattice cell (6); wherein, there is a first anti-reflection layer (4) between the GaInAs sub-cell (3) and the GaInP sub-cell (5); There is a second anti-reflection layer (7) and a third anti-reflection layer (8) between the GaAsP / GaInAs superlattice cell (6) and the GaInP sub-cell (9); there is a fourth anti-reflection layer on the GaInP sub-cell (9). A reflection layer (10), a fifth antireflection ...

Embodiment 2

[0018] Introduce the preferred embodiment of the five-junction photovoltaic cell with anti-reflection film that the present invention proposes below, this five-junction photovoltaic cell with anti-reflection film has following structure:

[0019] A bottom electrode (14) is set on the lower surface of the InP substrate (1), and a GaAs sub-cell (2) is set on the upper surface of the InP substrate (1); the GaAs sub-cell (2) has a GaInAs sub-cell (2). A battery (3); a GaInP subcell (5) on the GaInAs subcell (3); a strain-compensated GaAsP / GaInAs superlattice cell (6) on the GaInP subcell (5); a strain-compensated GaAsP GaInP sub-cell (9) on the GaInAs superlattice cell (6); wherein, there is a first anti-reflection layer (4) between the GaInAs sub-cell (3) and the GaInP sub-cell (5); There is a second anti-reflection layer (7) and a third anti-reflection layer (8) between the GaAsP / GaInAs superlattice cell (6) and the GaInP sub-cell (9); there is a fourth anti-reflection layer on ...

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Abstract

The invention discloses a five-knot cascade photovoltaic cell with an antireflection film. The five-knot cascade photovoltaic cell is structurally characterized in that, a bottom electrode is disposed on the lower surface of an InP substrate, a GaAs sub-cell, a GaInAs sub-cell and a GaInP sub-cell are sequentially disposed on the upper surface of the Inp substrate, the GaInP sub-cell is provided with a strain compensation GaAsP / GaInAs superlattice sub-cell. A GaInP sub-cell is disposed on the strain compensation GaAsP / GaInAs superlattice sub-cell. A first antireflection layer is disposed between the GaInAs sub-cell and the GaInP sub-cell. A second antireflection layer and a third antireflection layer are disposed between the strain compensation GaAsP / GaInAs superlattice sub-cell and the GaInP sub-cell disposed on the strain compensation GaAsP / GaInAs superlattice sub-cell. A fourth antireflection layer, a fifth antireflection layer and a sixth antireflection layer are disposed on the GaInP sub-cell disposed on the strain compensation GaAsP / GaInAs superlattice sub-cell, and a top electrode is formed on the fourth antireflection layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a five-junction cascaded photovoltaic cell with an antireflection film. Background technique [0002] Photovoltaic cells are optoelectronic devices that convert light energy into electrical energy. For photovoltaic cells, single-junction photovoltaic cells can only cover and utilize sunlight in a certain wavelength range. Generally, a variety of semiconductor materials with different band gaps are combined to form a multi-junction photovoltaic cell. [0003] At present, in lattice-matched GaInP / GaAs / Ge triple-junction photovoltaic cells, the maximum photoelectric conversion efficiency can reach 32% under the condition of no concentration. The Ge cell in the triple-junction cell covers a wider spectrum, and its short-circuit current can reach twice that of the other two-junction cell. Due to the restriction of the series connection of the triple-junction cel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0687
CPCY02E10/50Y02E10/544
Inventor 梅欣张俊
Owner LIYANG CITY PRODIVITY PROMOTION CENT