Method for producing semiconductor component and field effect semiconductor component

Abstract

A method for producing a semiconductor component and a field effect semiconductor component are described. The method includes providing a semiconductor body having a first surface and being comprised of a first semiconductor material extending to the first surface. At least one trench extends from the first surface into the semiconductor body and includes a gate electrode insulated from the semiconductor body and arranged below the first surface. The method further includes: forming a second insulation layer on the first surface with a recess that overlaps in projection onto the first surface with the conductive region; forming a mask region in the recess; etching the second insulation layer selectively to the mask region and the semiconductor body to expose the semiconductor body at the first surface; depositing a third insulation layer on the first surface; and etching the third insulation layer so that a semiconductor mesa of the semiconductor body arranged next to the a least one trench is exposed at the first surface.

Description

technical field [0001] Embodiments of the invention relate to methods for fabricating semiconductor components having trench contacts which are self-aligned to groove gate electrodes, in particular to having field electrodes arranged below the gate electrodes semiconductor transistors, and related semiconductor components. Background technique [0002] Semiconductor transistors, particularly field effect controlled switching devices such as metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs), have been used in a variety of applications including, but not limited to, as power supplies and power converters , electric cars, air conditioners, and even switches in stereo systems. Especially for power devices capable of switching large currents and / or operating at higher voltages, low switching losses are often desired. In order to reduce switching loss, research and development to reduce the distance between adjacent unit c...

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Problems solved by technology

But this results in higher capacitance

Therefore, switching losses may increase

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