Organic light emitting diode (OLED) pixel drive method and OLED pixel drive circuit for method
A technology of pixel driving circuit and driving method, which can be applied to instruments, static indicators, etc., and can solve problems such as the inability to solve the uniformity of the display screen, the difficulty in realizing current control, and the inability to adjust the gray scale of OLED light-emitting units.
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Embodiment 1
[0022] The first preferred mode of embodiment one:
[0023] The structure of the pixel driving circuit is as figure 1 As shown, it includes a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a storage capacitor CS, and an OLED light-emitting unit, wherein the first transistor M1, the third transistor M3, and the fourth transistor M4 are all PMOS Field effect transistor, the second transistor M2 is an NMOS field effect transistor, the source of the first transistor M1 is connected to the external power supply VDD, the drain of the first transistor M1 is connected to the anode of the OLED light-emitting unit and the drain of the second transistor M2 ( connected to figure 1 point C in), the cathode of the OLED light-emitting unit and the source of the second transistor M2 are grounded, the source of the third crystal M3 is connected to the external power supply VDD, the drain of the third crystal M3, the gate of the first transistor M1 ...
Embodiment 2
[0045] refer to Figure 5 The schematic diagram of the structure of the pixel driving circuit is shown, Image 6 The scanning timing diagram of each signal in the open field shown and Figure 7 The scanning timing diagram of each signal in the off field is shown.
[0046] Compared with Embodiment 1, the fourth transistor M4 in this circuit is changed from a PMOS field effect transistor to an NMOS field effect transistor, so the scanning timing of the SCAN signal changes accordingly. The principle of the circuit is the same as that of the first embodiment.
[0047] The MOS field effect transistor used in the second embodiment can also be replaced with other transistors: polysilicon thin film transistors, metal oxide thin film transistors, organic thin film transistors.
Embodiment 3
[0049] refer to Figure 8 The schematic diagram of the structure of the pixel driving circuit is shown, Figure 9 The scanning timing diagram of each signal in the open field shown and Figure 10 The scanning timing diagram of each signal in the off field is shown.
[0050] Compared with Embodiment 1, the third transistor M3 in this circuit is changed from a PMOS field effect transistor to an NMOS field effect transistor, so the scanning timing of the SELECT signal changes accordingly. The principle of the circuit is the same as that of the first embodiment.
[0051] The MOS field effect transistor used in the third embodiment can also be replaced with other transistors: polysilicon thin film transistors, metal oxide thin film transistors, organic thin film transistors.
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