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Shower head and vapor deposition equipment

A shower head, gas technology, applied in the direction of gaseous chemical plating, chemical reactive gas, crystal growth, etc., can solve the problems of shower head formation defects, and achieve the effect of avoiding deposition in the

Inactive Publication Date: 2013-09-25
光垒光电科技(上海)有限公司
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  • Abstract
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Problems solved by technology

[0006] The purpose of the present invention is to provide a shower head to alleviate or solve the problem that the shower head is easy to form defects on the substrate in the prior art

Method used

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  • Shower head and vapor deposition equipment
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Embodiment Construction

[0012] The shower head and vapor deposition equipment provided by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form, and are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0013] It can be seen from the content described in the background art that the shower head of the prior art is easy to form impurity residues on the substrate. The inventors of the present invention have found in research that if a material layer is arranged on the lower surface of the shower head to absorb the gas that does not react in the MOCVD process, so that a layer of gas layer is formed on the lower surface of the shower head ; The gas layer constitutes a protecti...

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Abstract

The invention discloses a shower head and vapor deposition equipment. The vapor deposition equipment comprises the shower head, the shower head comprises a shower head body and a material layer located on the lower surface of the shower head body, the material layer can adsorb gas which does not react in an MOCVD (Metal Oxide Chemical Vapor Deposition) process, then, a gas layer is formed on the surface of the material layer, and a protective layer is formed by the gas layer so as to isolate molecules of reacting gas or excitons or ions decomposed from the reacting gas, thus the molecules of the reacting gas or the excitons or ions decomposed from the reacting gas can not react and deposit on the lower surface of the shower head, and then, solid sediments deposited on the surface of the shower head are reduced and even avoided.

Description

technical field [0001] The invention relates to semiconductor equipment, especially a shower head and vapor deposition equipment. Background technique [0002] The basic growth process of chemical vapor deposition, such as metalorganic chemical vapor deposition (MOCVD) process, is to introduce the reaction gas from the gas source into the reaction chamber, and use the substrate heated by the heater to initiate a chemical reaction, thereby forming a single crystal or polycrystalline film. In the MOCVD process, the reactants required for film growth rely on gas transport (such as flow and diffusion) to reach the growth surface. During the transport process, chemical reactions also occur. Finally, the growth particles are combined into the film lattice through adsorption and surface reactions. . The MOCVD equipment is the main equipment used to complete the MOCVD process. [0003] The epitaxial deposition of existing GaN thin films is usually done in MOCVD equipment through ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/34C30B25/14C30B29/38C30B29/40
Inventor 林翔丁大鹏
Owner 光垒光电科技(上海)有限公司
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