Plasma processing equipment and method and method for washing chamber

Abstract

The invention provides plasma processing equipment. The equipment comprises a process chamber, a top electrode, a bottom electrode and an inner lining which is arranged in the process chamber and encloses the inner wall of the chamber, wherein the top electrode is connected with a top electrode radio frequency power supply to acquire radio frequency power; the bottom electrode is connected with abottom electrode radio frequency power supply to acquire radio frequency power; and the inner lining is connected with an inner lining radio frequency power supply for providing radio frequency powerfor the inner lining. The plasma processing equipment provided by the invention can guide part of plasmas to bombard the inner lining effectively to reduce and even prevent deposition of reaction by-products on the inner lining so as to improve the stability and repeatability of an equipment process effectively; and when the plasma processing equipment provided by the invention is washed by a drymethod, the washing time can be shortened effectively, the production capacity can be improved, and the loss of the equipment can be reduced. In addition, the invention also provides a plasma processing method and a method for washing the chamber.

Description

technical field [0001] The present invention relates to the field of plasma technology, and in particular, to a plasma processing device, a method, and a chamber cleaning method. Background technique [0002] In recent years, with the continuous improvement of plasma processing / processing technology for the production of large integrated circuits, the integration level of integrated circuits has been continuously improved and their critical dimensions have been continuously reduced. At the same time, manufacturers have put forward higher requirements on the stability of processing equipment and the repeatability of the process (such as the repeatability of process parameters between continuous production sheets and sheets). [0003] see figure 1 , is a schematic diagram of the principle of a plasma processing device for performing an etching process. As shown in the figure, the equipment includes: a process chamber 101, a coupling coil 102 and an air inlet device 103 arran...

AI Technical Summary

Problems solved by technology

However, when cleaning chambers of different processes, in order to ensure the cleaning effect, the etching time is often set longer, and the long-term etching of the process chamber by the plasma formed by the fluorine-containing gas will damage the inner wall of the chamber. The coating will generate some other by-products, which will affect the adsorption effect of the coating, and then affect the process stability; as a result, it will not only shorten the normal service life of the equipment, increase the cost, but also reduce the production efficiency due to the long cleaning time, and affect the reliability of the equipment. capacity utilization

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