Graph pretreatment method for removing negative OPC (Optical Proximity Correction)

A preprocessing and graphic technology, applied in the photomechanical process of photomechanical processing of originals, pattern surface, optics, etc., can solve the problem of short bevel graphic preprocessing etc.

Active Publication Date: 2013-10-02
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

[0008] In view of the above-mentioned existing problems, the present invention discloses a graphic preprocessing method for removing unfavorable OPC corrections, s

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  • Graph pretreatment method for removing negative OPC (Optical Proximity Correction)
  • Graph pretreatment method for removing negative OPC (Optical Proximity Correction)
  • Graph pretreatment method for removing negative OPC (Optical Proximity Correction)

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Embodiment Construction

[0027] The present invention will be further described below with reference to the drawings and specific embodiments, but it is not a limitation of the present invention.

[0028] In the prior art, the original graphic 100 is directly subjected to model-based OPC processing to obtain a corrected graphic 200 with abnormal OPC correction results, such as figure 1 As shown, the horizontal edge 102 adjacent to the short hypotenuse 101 forms a corrected horizontal edge 202 farther from the target after correction. Simulate the correction graph 200, such as figure 2 As shown, due to the excessive correction, the distance between the simulated correction pattern 300 and the adjacent lower pattern at A is too small, forming a weak bridging phenomenon. When the process is unstable, bridging is likely to occur at weak points.

[0029] An embodiment of the present invention relates to a graphics preprocessing method for removing unfavorable OPC corrections, which is applied after the original...

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Abstract

The invention discloses a graph pretreatment method for removing negative OPC (Optical Proximity Correction). The method comprises the following steps of setting a short hypotenuse size selection standard; screening graphs with short hypotenuses in a graph segment, selecting a target graph meeting the short hypotenuse size selection standard; expanding the short hypotenuse in the target graph towards the inside of the target graph to form a rectangle; expanding outside the rectangle to form a minimum bounding box region, wherein the minimum bounding box region can cover the short hypotenuse in the target graph; combining the target graph with the minimum bounding box region to remove the short hypotenuse from the target graph. In the method, by expanding the short hypotenuse and finally combining the minimum bounding box region with the target graph, the short hypotenuse graph negative for the OPC is removed, after the short hypotenuses are removed, and the target graph is changed into an orthogonal right-angle side graph, the result of the OPC can be consistent with the expectation effect well.

Description

Technical field [0001] The invention relates to the technical field of microelectronic optics proximity correction, in particular to a graphic preprocessing method for removing unfavorable OPC corrections. Background technique [0002] In the process of model-based Optical Proximity Correction (OPC), some graphics that are not conducive to OPC correction are often encountered, causing OPC correction to produce some technological weaknesses, such as small convexities in linear graphics. These unfavorable OPC-corrected graphics usually lead to excessive or insufficient correction of adjacent graphic segments, which leads to process weaknesses in the exposure process. [0003] In semiconductor manufacturing below the 0.13um technology node, model-based OPC methods have been widely used in key levels and lithography processes including ion implantation layers. Model-based OPC methods can well simulate the exposure process (sometimes It also includes the model of etching), combined wit...

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Application Information

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IPC IPC(8): G03F1/36
Inventor 何大权魏芳张旭升
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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