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Reliability metrics management for soft decoding

A decoder and decoding failure technology, applied in the field of soft decoding, which can solve the problems of large error rate and deterioration of error rate.

Active Publication Date: 2013-10-30
MARVELL ASIA PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such changes can create greater error rates that can worsen as equipment ages

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  • Reliability metrics management for soft decoding
  • Reliability metrics management for soft decoding
  • Reliability metrics management for soft decoding

Examples

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Embodiment Construction

[0019] figure 1 An example of a memory system 10 is schematically illustrated. Memory system 10 includes memory 14 . Memory 14 is any suitable type of memory, such as volatile memory (eg random access memory of a suitable type), non-volatile memory (eg read only memory), or the like. In one embodiment, memory 14 is an electrically erasable programmable read-only memory (EEPROM), such as flash memory.

[0020] Although in figure 1 It is not shown in the figure, but the memory 14 includes a plurality of memory sectors, wherein each memory sector includes a plurality of memory cells and each memory cell stores one or more bits of data. Each memory cell, such as memory 14, may be a single-level cell (SLC) that stores a unit of data. In another example, each memory cell of memory 14 may be a multi-level cell (MLC) that stores more than one bit of data. In one embodiment, a memory sector corresponds to a memory page of memory 14 . In one embodiment, all memory cells included...

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Abstract

Embodiments provide a method for reading a target memory sector of a memory. The method comprises, based on read data corresponding to a plurality of memory sectors of the memory, estimating first one or more reference voltages and, using the first one or more reference voltages, performing a first read operation on the target memory sector. The method further comprises determining an error correcting code (ECC) decoding failure of the first read operation and, in response to determining the ECC decoding failure of the first read operation and based on read data corresponding to the target memory sector, updating the estimate of the first one or more reference voltages to generate second one or more reference voltages. The method also comprises using the second one or more reference voltages, performing a second read operation on the target memory sector.

Description

[0001] Cross References to Applications [0002] This disclosure claims priority to U.S. Patent Application No. 13 / 397,434, filed February 15, 2012, which claims priority to U.S. Provisional Patent Application No. 61 / 444,534, filed February 18, 2011 Right, the entire disclosure of this US Provisional Patent Application is hereby incorporated by reference in its entirety, except for those sections that are inconsistent with the present disclosure. This disclosure is related to the following U.S. patent applications: U.S. Patent Application No. 12 / 552,925, filed September 02, 2009; U.S. Patent Application No. 12 / 959,891, filed December 3, 2010; U.S. Patent Application No. 13 / 017430, filed April 08, 2011; U.S. Patent Application No. 13 / 089,135, filed April 08, 2011; and U.S. Patent Application No. 13 / 167,896, filed June 24, 2011, fully incorporated by reference These US patent applications are hereby incorporated in their entirety, except for those sections where they are inconsi...

Claims

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Application Information

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IPC IPC(8): G06F11/10
CPCG06F11/1048G11C16/26G11C16/28G11C29/00
Inventor 阳学仕
Owner MARVELL ASIA PTE LTD