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MOCVD (Metal-organic Chemical Vapor Deposition) equipment and adjustment method for interval between tray and spray header of equipment

A technology of sprinkler head and equipment, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of complex and complicated equipment structure, reduce pollution, adjust the gap between tray and sprinkler head The spacing of the easy effects

Inactive Publication Date: 2013-11-13
光垒光电科技(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The disadvantage of the existing equipment is that the structure of the equipment is too complicated, and the adjustment of the distance between the tray and the sprinkler head needs to involve multiple parts, which is too complicated

Method used

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  • MOCVD (Metal-organic Chemical Vapor Deposition) equipment and adjustment method for interval between tray and spray header of equipment

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Embodiment Construction

[0037] In the MOCVD equipment of the prior art, the adjustment of the distance between the shower head and the tray is realized by the height of the entire tray in the reaction chamber, and the height of the tray in the reaction chamber is set by the The bellows under the reaction chamber is realized, and there are some transmission parts between the bellows and the tray (for details, please refer to figure 1 and background technology section), the purpose is to enable the tray to rotate. This makes the structure of the entire MOCVD equipment relatively complex, and adjusting the height of the tray in the reaction chamber also involves many related transmission components.

[0038] In order to solve the above problems, the inventors of the present invention considered adjusting the height of the shower head in the reaction chamber, adjusting the distance between the shower head and the tray, and the shower head lifting device connected to the shower head , adjust the height o...

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Abstract

The invention provides MOCVD (Metal-organic Chemical Vapor Deposition) equipment and an adjustment method for the interval between a tray and a spray header of the equipment. The MOCVD equipment comprises a reaction cavity, the spray header, the tray, a spray header lifting device and a cavity sealing element, wherein the reaction cavity comprises a cavity side wall and a cavity bottom plate below the cavity side wall; the spray header is arranged at the top of the reaction cavity and is provided with a gas venting surface; the tray is arranged below the spray header and a reaction zone; the spray header lifting device is connected with the spray header and is used for lifting or lowering the spray header in the reaction cavity so as to adjust the interval between the spray header and the tray; the cavity sealing element is arranged at the top of the reaction cavity and is used for ensuring that tight coupling is formed between the spray header and the cavity side wall when the spray header in the reaction cavity is lifted and lowered. The MOCVD equipment has the advantages that the distance between the tray and the spray header is adjusted by adjusting the height of the tray in the reaction cavity in a sealed environment, and that the equipment structure is simplified. The adjustment method for the interval between the tray and the spray header is simplified.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to an MOCVD equipment and a method for adjusting the distance between a tray and a shower head. Background technique [0002] Among the existing MOCVD equipment, the MOCVD equipment using a Close Couple Showerhead (CCS) showerhead as an air inlet device has many advantages such as uniform reaction and easy process development. The CCS shower head is used to uniformly transport the reaction gas to the reaction area above the tray with a certain temperature, where complex chemical reactions occur in the reaction area, and finally a specific epitaxial material layer is formed on the substrate of the tray. [0003] Specifically, please refer to figure 1 , figure 1 It is a schematic structural diagram of an existing MOCVD device. Existing MOCVD equipment comprises: reaction cavity, comprises cylindrical hollow cavity side wall 8 and the first cavity bottom plate 9 that is positi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/52
Inventor 陈勇范玉川
Owner 光垒光电科技(上海)有限公司
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