Polysilicon ingot furnace and rapid ingot casting technology thereof

A technology of polysilicon ingot casting furnace and ingot casting, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems that cannot achieve short cycle, improve the quality of ingot casting, be beneficial to industrial production, and temperature distribution uniform effect

Inactive Publication Date: 2013-11-20
QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitations of equipment and cooling conditions, it is impossible to achieve the goal of short cycle only by optimizing the process of the above three stages

Method used

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  • Polysilicon ingot furnace and rapid ingot casting technology thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The lower part of the thermal insulation sleeve is evenly provided with 3 groups of side air vents equidistant along the circular direction. Each group is equidistantly provided with two side air vents along the circular direction, and the diameter of each side air vent is 30 mm.

[0024] 1. Put 650Kg of silicon material into the quartz crucible 5, evacuate to 0.1Pa, pass argon gas through the top air inlet 1 as a protective gas, and evaporate the moisture of the heat preservation sleeve 3 and silicon material, etc. Within 2 hours, the temperature inside the quartz crucible 5 was raised to 1175°C.

[0025] 2. Introduce argon gas as a protective gas to keep the pressure in the furnace body 2 at 400KPa, make the temperature in the quartz crucible 5 reach 1545°C within 4 hours and keep it warm for 8 hours until all the silicon materials are melted.

[0026] 3. During the crystal growth stage, the quartz crucible 5 containing the molten silicon liquid does not move, and th...

Embodiment 2

[0030] The lower part of the thermal insulation sleeve is evenly provided with 10 sets of side air vents equidistant along the circular direction. Each group is provided with 10 side air vents equidistantly along the circular direction, and the diameter of each side air vent is 50mm.

[0031] 1. Put 650Kg of silicon material into the quartz crucible 5, evacuate to 0.08Pa, feed argon gas through the top air inlet 1 as a protective gas, and evaporate the moisture of the heat insulation layer 4, silicon material, etc. Within 2 hours, the temperature inside the quartz crucible 5 was raised to 1175°C.

[0032] 2. Introduce argon gas as a protective gas to keep the pressure in the furnace body 2 at 600KPa, make the temperature in the quartz crucible 5 reach 1545°C within 5 hours and keep it warm for 10 hours until the silicon material is completely melted.

[0033] 3. Keep the quartz crucible 5 filled with molten silicon liquid stationary, open the top air inlet 1 and the side air ...

Embodiment 3

[0037]The lower part of the thermal insulation sleeve is uniformly provided with 5 sets of side air vents equidistant along the circular direction. Each group is equidistantly provided with 5 side air vents along the circular direction, and the diameter of each side air vent is 40mm.

[0038] 1. Put 650Kg of silicon material into the quartz crucible 5, evacuate to 0.09Pa, feed argon gas through the top air inlet 1 as a protective gas, and evaporate the moisture of the heat insulation layer 4, silicon material, etc. Within 2 hours, the temperature inside the quartz crucible 5 was raised to 1175°C.

[0039] 2. Introduce argon gas as a protective gas to keep the pressure in the furnace body 2 at 500KPa, make the temperature in the quartz crucible 5 reach 1545°C within 5 hours and keep it warm for 9 hours until all the silicon materials are melted.

[0040] 3. Keep the quartz crucible 5 filled with molten silicon liquid stationary, open the top air inlet 1 and the side air inlet ...

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Abstract

The invention belongs to the field of polysilicon casting, and especially relates to a polysilicon ingot furnace and a rapid ingot casting technology thereof. Lateral part air vents are evenly arranged in the annular direction in the lower part of a heat-insulation sleeve of the polysilicon ingot furnace. The rapid ingot casting technology, which adopts the polysilicon ingot furnace, comprises following steps: during the crystal growth process, the outlet is stayed open, argon is introduced into the furnace body from the inlet in the top part and lower openings of the lateral part air vents; in the phase of annealing, the outlet is stayed open, argon is introduced from the inlet in the top part, and upper openings and middle openings of the lateral part air vents, in the temperature maintaining stage, all lateral part air vents are shut; in the cooling stage, the outlet, the inlet in the top part, and all lateral part air vents are opened, and when the temperature of the finance arrives at 350 to 400 DEG C, silicon ingots are taken out. The polysilicon ingot furnace and the rapid ingot casting technology thereof has the advantages that cooling positions can be selected and cooling speed can be effectively controlled through the lateral part air vents, thus dislocation is reduced, and the production period is reduced by 15% through adopting the furnace and method thereof.

Description

technical field [0001] The invention belongs to the field of polycrystalline silicon ingot casting, and in particular relates to a polycrystalline silicon ingot casting furnace and a rapid ingot casting process thereof. Background technique [0002] Polycrystalline silicon is a form of elemental silicon. When molten elemental silicon solidifies under supercooled conditions, silicon atoms are arranged in the form of diamond lattices to form many crystal nuclei, and these nuclei grow into crystal grains with different crystal plane orientations. These crystal grains Joined together to form polysilicon. The process of producing solar photovoltaic products in the solar photovoltaic industry includes polycrystalline silicon ingots, cutting into pieces, making cells and packaging them into solar modules. It can be seen that polycrystalline silicon ingots are an important part of the solar photovoltaic industry and the first choice for the production of solar photovoltaic products....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 谭毅王峰李鹏廷熊华江刘东雷安广野姜大川
Owner QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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