Array substrate and display device
An array substrate and substrate technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of poor thermal stability of low-resistance pure Al thin films, short circuit of gate scanning lines and data scanning lines, etc., so as to prevent thermal movement and reduce Cost, the effect of improving the yield
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Embodiment 1
[0029] The present invention provides an array substrate, including a substrate and a metal pattern on the substrate, the metal pattern is a double-layer structure, wherein the first layer structure is composed of the second metal and Al; the second layer structure is composed of Mo composition. In the present invention, other metal elements are added to Al to form alloys, such as Nd, Ti, Zr, Ta, Sc, Cu and other metals, and the added metals are formed at the grain boundaries to play the role of anchoring and prevent the formation of hillocks.
[0030] Wherein, the content ratio of the second metal to Al in the metal layer is lower than 1 / 99, preferably, the content ratio of the second metal to Al is between 1 / 999-1 / 199. While reducing the cost, it can solve the generation of a small amount of hillocks in the prior art, thereby increasing the yield rate of products by 1%-8%.
[0031] In this way, the Al / Mo double-layer structure is used to form a metal film with a high meltin...
Embodiment 2
[0035] The present invention provides an array substrate, including a substrate and a metal pattern deposited on the substrate, the metal material is a three-layer structure stacked in sequence, wherein the first layer structure is composed of Mo; the second layer structure is composed of the The second metal is composed of Al; the third layer structure is composed of Mo, Ti or Ta. The third layer structure is a barrier layer. In the present invention, other metal elements are added to Al to form alloys, such as Nd, Ti, Zr, Ta, Sc, Cu and other metals, and the added metals are formed at the grain boundaries to play the role of anchoring and prevent the formation of hillocks.
[0036] Wherein, the content ratio of the second metal to Al in the metal layer is lower than 1 / 99, preferably, the content ratio of the second metal to Al is between 1 / 999-1 / 199. While reducing the cost, it can solve the generation of a small amount of hillocks in the prior art, thereby increasing the y...
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