Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of semiconductor fin ray, manufacturing method of finfet device

A manufacturing method and semiconductor technology, which are applied in the manufacturing of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems that the fins cannot be perpendicular to the surface of the substrate, and the sides of the fins are rough.

Active Publication Date: 2017-02-08
浙江海宁经编产业园区开发有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a method for manufacturing semiconductor fins with smooth sides and vertical fins to the structure of the substrate surface, so as to solve the problems in the prior art that the sides of the fins are rough and the fins cannot be aligned with the surface of the substrate. vertical problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of semiconductor fin ray, manufacturing method of finfet device
  • Manufacturing method of semiconductor fin ray, manufacturing method of finfet device
  • Manufacturing method of semiconductor fin ray, manufacturing method of finfet device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] figure 1 A schematic flow chart showing a method for manufacturing semiconductor fins according to an embodiment of the present invention, Figure 2a(1)~Figure 2d(2) It shows the structural diagrams of semiconductor fins at various stages in the manufacturing process, wherein Figure (1) is a top view, and Figure (2) is a cross-sectional view of Figure (1) along the AA' direction, combined together Figure 1 ~ Figure 2d (2) , the flow process of the manufacturing method of the semiconductor fin ray is as follows:

[0089] S101, providing the substrate 11, such as Figure 2a(1) and 2a(2) shown.

[0090] The substrate 11 in Embodiment 1 of the present invention is a bulk silicon substrate. The bulk silicon substrate may be a P-well substrate, an N-well substrate or a double-well substrate.

[0091] S102: Form a first mask layer 12 on a predetermined region above the substrate 11, such as Figure 2b(1) and 2b(2) shown.

[0092] The first mask layer 12 can be fabrica...

Embodiment 2

[0107] image 3 A schematic flow chart showing a method for manufacturing semiconductor fins according to an embodiment of the present invention, Figure 4a ~ Figure 4i Schematic diagrams showing the structure of semiconductor fins at various stages in the fabrication process, combined with Figure 3 ~ Figure 4i , the flow process of the manufacturing method of the semiconductor fin ray is as follows:

[0108] Considering that S301-S305 are the same as or corresponding to S101-S105 in the above embodiment, correspondingly, Figure 4a ~ Figure 4e and Figure 2a(2)~Figure 2d(2) They are the same or corresponding, and will not be repeated here. For details, refer to related descriptions in the foregoing embodiments.

[0109] S306, forming sidewalls 15 on both sides of the fin ray 14, such as Figure 4f shown.

[0110]The sidewalls 15 are formed on both sides of the fin 14 by a combination of deposition and etch-back. For example, one or more layers of materials (such as sil...

Embodiment 3

[0121] Figure 5 It shows a schematic flow chart of the manufacturing method of the FinFET device according to the embodiment of the present invention, wherein the FinFET device adopts the semiconductor fin bars manufactured by the manufacturing method described in the above embodiment, Figure 6a (1) ~ 6l (3) It shows the structure schematic diagram of the FinFET device at various stages in the manufacturing process, where Figure (1) is a top view, Figure (2) is a cross-sectional view of Figure (1) along the AA' direction, and Figure (3) is a cross-sectional view of Figure (1) along Sectional view in BB' direction. combined Figure 5 ~ Figure 6l (3) , the flow of the manufacturing method of the FinFET device is as follows:

[0122] S501, providing the substrate 11, such as Figure 6a(1) and 6a(2) shown.

[0123] In the embodiment of the present invention, the substrate 11 is a bulk silicon substrate. The bulk silicon substrate may be a P-well substrate, an N-well substr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An embodiment of the present invention provides a method for manufacturing semiconductor fins and a method for manufacturing FinFET devices. The method for manufacturing semiconductor fins includes: providing a substrate; selectively epitaxially growing a first a mask layer; using the first mask layer as a mask to selectively epitaxially grow a first epitaxial layer on the substrate; using the first epitaxial layer as a mask to remove all part of the substrate at the bottom of the first mask layer and the first mask layer, so as to form fins at the bottom of the first epitaxial layer. Through the above scheme, the combination of selective epitaxial growth and anisotropic etching process can ensure that the surfaces of the semiconductor fins and the gate oxide layer are perpendicular to each other without using photolithography technology, and reduce the surface roughness of the semiconductor fins degree, forming fin rays with smooth sides.

Description

technical field [0001] The invention belongs to the technical field of large-scale integrated circuit manufacturing, and in particular relates to a method for manufacturing semiconductor fins and a method for manufacturing FinFET devices using the method. Background technique [0002] As Moore's Law advances to the 22nm process node, the traditional planar field effect transistor can no longer meet the requirements of low power consumption and high performance. In order to overcome the short-channel effect and increase the driving current density per unit area, three-dimensional fin field-effect transistors (Fin Field-Effect Transistor; FinFET) began to introduce large-scale integrated circuit manufacturing technology. This structure has very outstanding short-channel control capability and high drive current due to more gate control area and narrower channel depletion region. [0003] FinFET is an emerging structure that includes narrow and independent fins with gates on b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/336
CPCH01L29/66795H01L21/3081H01L29/7854H01L21/3086H01L29/6653H01L21/02636H01L21/266H01L21/31144H01L29/6681
Inventor 赵静
Owner 浙江海宁经编产业园区开发有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com