A High Electron Mobility Transistor

Abstract

The invention belongs to the field of semiconductor devices, in particular to a transistor with high electron mobility. Optimized design for the self-heating effect of gallium nitride-based high electron mobility transistors. The technical solution is: a high electron mobility transistor, including a substrate, a nucleation layer grown sequentially above the substrate, a channel layer, and a barrier layer, and the source, gate, drain, source and gate and the passivation layer between the gate and the drain on the barrier layer; it is characterized in that, between the gate and the passivation layer A high thermal conductivity material layer is provided, and the high thermal conductivity material layer is in contact with the barrier layer. The present invention conducts the thermal energy of the active area near the gate to the surface of the device through the material layer with high thermal conductivity, thereby effectively reducing the temperature of the active area of ​​the device, realizing the reduction of the channel temperature of the device, and improving the electrical characteristics of the device, so that the device can It works normally at higher temperature and higher power, improving the reliability of the device.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a transistor with high electron mobility. Background technique [0002] High electron mobility transistor devices (compound semiconductor devices), due to their high electron saturation velocity, high breakdown voltage, and high electron mobility, make them suitable for applications in various fields such as high temperature, high frequency, radiation resistance, and high power. One of the semiconductor devices with the most application potential in microwave and microwave applications. Among the existing high electron mobility transistor devices, gallium nitride-based high electron mobility transistors have received extensive attention and research because of their excellent performance. [0003] At present, aluminum gallium nitride / gallium nitride (AlGaN / GaN) heterojunction high electron mobility transistor (HEMT) is commonly used as a GaN-based high electron mobility tran...

AI Technical Summary

Problems solved by technology

A slight self-heating effect will lead to a reduction in the current output capability and additional power efficiency, as well as a decrease in the transconductance of the output terminal, which will lead to a serious degradation of the radio frequency and microwave performance of the device; a severe self-heating effect will also cause the function of the device to fail and shorten the life of the device. service life or even burn the device

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