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Embedded resistance alloy material, embedded resistance film and preparation method thereof

A technology of embedded resistors and thin films, which is applied in the application of resistive materials, metal material coating processes, resistors, etc., can solve the problems of poor corrosion resistance, thermal stability and anti-aging performance.

Active Publication Date: 2015-09-30
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the corrosion resistance, thermal stability and aging resistance of these materials are still poor, and there is still room for improvement for wider applications

Method used

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  • Embedded resistance alloy material, embedded resistance film and preparation method thereof
  • Embedded resistance alloy material, embedded resistance film and preparation method thereof
  • Embedded resistance alloy material, embedded resistance film and preparation method thereof

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preparation example Construction

[0039] see figure 1 , the preparation method of the embedded resistive film of one embodiment, comprises the following steps:

[0040] Step S110 : providing a substrate, and activating the substrate.

[0041] The substrate can be copper foil, aluminum foil or aluminum-magnesium alloy, etc., preferably copper foil. It is preferable to form an embedded resistive film on the rough surface of the copper foil.

[0042] First, the substrate is activated to deposit a buried resistance alloy material on the surface of the activated substrate to form a buried resistance film stacked on the surface of the substrate.

[0043] Preferably, the substrate is soaked in an activator at a temperature of 20° C.˜60° C. for 1 minute to 10 minutes, so as to activate the surface of the substrate.

[0044] The activator is preferably an activator containing 20-120 grams of zinc sulfate, 10-50 grams of DL-sodium malate and 5-30 grams of zinc powder per liter.

[0045] After activation by the above...

Embodiment 1

[0072] 1. Provide a copper foil with a relatively smooth surface and a rough surface as a substrate, paste a protective film on the smooth surface of the copper foil, wash the copper foil with acetone, and then soak it in an alkaline solution with a temperature of 50 °C 5 minutes, take out, wash with deionized water; wherein, the alkaline solution is a mixed aqueous solution of sodium hydroxide, sodium carbonate and sodium phosphate, the concentration of sodium hydroxide is 30g / L, the concentration of sodium carbonate is 30g / L, phosphoric acid The concentration of sodium is 30g / L;

[0073] 2. Immerse the sample obtained in step 1 in dilute sulfuric acid with a mass fraction of 5% for pickling for 5 minutes, take out and wash with deionized water;

[0074] 3. Immerse the sample obtained in step 2 in 200 mL of activator with a temperature of 40°C, let stand for 10 minutes for activation, take out and wash with deionized water; wherein, 200 mL of activator contains 24 g of zinc s...

Embodiment 2

[0080] 1. Provide a copper foil with a relatively smooth surface and a rough surface as the substrate, paste a protective film on the smooth surface of the copper foil, wash the copper foil with acetone, and then soak it in an alkaline solution with a temperature of 30 °C 10 minutes, take out, wash with deionized water; wherein, the alkaline solution is a mixed aqueous solution of sodium hydroxide, sodium carbonate and sodium phosphate, the concentration of sodium hydroxide is 30g / L, the concentration of sodium carbonate is 30g / L, phosphoric acid The concentration of sodium is 30g / L;

[0081] 2. Immerse the sample obtained in step 1 in dilute sulfuric acid with a mass fraction of 5% for pickling for 5 minutes, take out and wash with deionized water;

[0082] 3. Immerse the sample obtained in step 2 in 200 mL of activator with a temperature of 30°C, stand for 10 minutes for activation, take out and wash with deionized water; wherein, 200 mL of activator contains 24 g of zinc su...

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Abstract

The invention relates to an embedded resistance alloy material, an embedded resistive film and a preparation method thereof. The embedded resistance alloy material disclosed by the invention comprises the following components in percentage by weight: 80-97% of nickel, 0.1-8% of molybdenum and 2-12% of phosphorus. The embedded alloy material disclosed by the invention is prepared into the embedded resistive film. Experiments prove that the embedded resistance film has better corrosion resistance, heat stability and ageing resistance.

Description

technical field [0001] The invention relates to the technical field of electronic materials and packaging, in particular to an embedded resistance alloy material, an embedded resistance film and a preparation method thereof. Background technique [0002] Electronic products such as computers, mobile phones, and digital cameras have been rapidly popularized in recent years, and people have put forward higher and higher requirements for the performance, price, lightness and portability of these electronic products. Assembling these electronic products requires the use of a large number of passive components such as capacitors, resistors, and inductors, and the number is much larger than that of active components such as chips. The typical ratio of the number of passive components to active components is 20:1. In some radio products, the ratio of the two is even as high as 50:1. A large number of passive components, such as traditional discrete packaging, are not conducive to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C19/03C23C18/50C23C18/30H01C7/00H01C17/18
Inventor 孙蓉苏星松符显珠郭慧子
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI