Bad block table storage method and device and NAND gate nonvolatile memory

Abstract

The invention provides a bad block table storage method. The method includes the steps of generating a bad block table, namely, during initial use of an NAND gate nonvolatile memory, using a driver of the NAND gate nonvolatile memory to scan bad blocks in the NAND gate nonvolatile memory and generate a main bad block table; writing in the main bad block table, namely, writing the main bad block table into any non-bad block in the NAND gate nonvolatile memory. The invention further discloses one NAND gate nonvolatile memory. A bad block table storage device provided in the invention is applied to the NAND gate nonvolatile memory. The main bad block table is stored in the non-bad block, so that chances of the NAND gate nonvolatile memory being not available due to failure of reading the bad block table are reduced greatly. A slave bad block table is also stored; when the main bad block table cannot be read, a new main bad block table can be recovered from the slave bad block table; accordingly, normal use of the NAND gate nonvolatile memory is ensured.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductors, in particular to a storage method and device for a bad block table and a NAND gate type nonvolatile memory. 【Background technique】 [0002] NAND-type non-volatile memory (also known as: NAND flash memory or NAND chips, hereinafter referred to as NAND chips) is a better storage device than hard drives, and its array is divided into a series of 128kB blocks, which are NAND chips The smallest erasable entity in . [0003] The existing multi-level cell NAND non-volatile memory (also known as: MLC NAND flash memory, hereinafter referred to as MLC NAND flash memory; MLC English full name Multi-Level Cell, Chinese name: multi-level cell) in the process of leaving the factory and using , Bad blocks (caused by continuous write operations or process defects during use) are a difficult problem that MLC NAND flash memory cannot solve from production and hardware, and as the capacity increases, the ...

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Problems solved by technology

[0003] The existing multi-level cell NAND non-volatile memory (also known as: MLC NAND flash memory, hereinafter referred to as MLC NAND flash memory; MLC English full name Multi-Level Cell, Chinese name: multi-level cell) in the process of leaving the factory and using , Bad blocks (caused by continuous write operations or process defects during use) are a difficult problem that MLC NAND flash memory cannot solve from production and hardware, and as the capacity increases, the problem becomes more and more serious

On the one hand, it is required to improve the hardware verification capability of the NAND chip control interface, on the other hand, it also poses greater challenges to the software design

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