Light emitting device with improved electrode configuration

Abstract

This invention provides a light-emitting device with improved electrode structures. The light-emitting device includes a first semiconductor layer and a second semiconductor layer; a light emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode pattern layer on the first semiconductor layer; and a second electrode pattern layer on the second semiconductor layer, wherein the second electrode pattern layer includes an electrode main body and multiple branch electrodes extending from the electrode main body to the first electrode pattern layer. Improved electrode structures of the light emitting device provided by the embodiment of the invention and relatively thin transparent conductive oxide layers together help to increase the light emitting efficiency of the light emitting device.

Description

[0001] This application is a divisional application of the patent application 200910167299.9 with the filing date of September 2, 2009, and the title of the invention is "Light-emitting device with improved electrode structure". technical field [0002] The present invention relates to light emitting devices, and more particularly, to light emitting devices having improved electrode configurations. Various arrangements of electrode configurations together with relatively thin transparent conductive oxide layers can increase light extraction and reduce the operating voltage of the light emitting device. Background technique [0003] Light-emitting diodes (LEDs), which convert electrical current into light, are among the most important solid-state light-emitting devices today. LEDs generally include a light emitting layer located between a P-type semiconductor layer and an N-type semiconductor layer. A drive current is applied to the P-type electrical contact electrically con...

AI Technical Summary

Problems solved by technology

In addition, heat is generated at specific parts of the LED, causing more rapid degradation of the component material around the electrical contacts

For the N-type nitride-based semiconductor layer, although it has better conductivity, there are still some obstacles for the current to diffuse laterally on this layer

As the size of LED devices increases, current cannot spread uniformly across the N-type nitride-based semiconductor layer starting from the electrical contacts

Therefore, the size of conventional nitride-based LEDs is limited by the lateral diffusion of current in the P-type nitride-based semiconductor layer and in the N-type nitride-based semiconductor layer.

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