Semiconductor device, manufacturing method thereof, and electronic device
A technology for semiconductors and organic semiconductor films, applied in semiconductor/solid-state device manufacturing, semiconductor devices, organic semiconductor devices, etc., can solve the problems of deterioration of characteristics, damage to organic semiconductor films, and inability to fully alleviate the stress of organic semiconductor films. Stress and effect of suppressing deterioration of properties
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no. 1 example
[0056] [1-1. Structure of thin film transistor]
[0057] figure 1A cross-sectional structure of a bottom-gate and top-contact thin film transistor (thin film transistor 10 ) according to the first embodiment of the present invention is shown. The thin film transistor 10 is a TFT using an organic semiconductor material as a semiconductor film, and can be used as, for example, a driving element of an organic EL display or the like. In the thin film transistor 10, a gate electrode 12, a gate insulating film 13, an organic semiconductor film (semiconductor film 14) for forming a channel region, and a pair of source-drain electrodes (source electrode 15A and drain electrode 15B) are sequentially provided on a substrate 11 on. In the present embodiment, each of the source electrode 15A and the drain electrode 15B is composed of a plurality of layers (three layers in this case), and has a connection layer 15a, a buffer layer 15b, and a wiring layer 15c in which the semiconductor T...
no. 2 example
[0092] Figure 6 A cross-sectional structure of a bottom-gate and top-contact thin film transistor (thin film transistor 30A) according to a second embodiment of the present invention is shown. In the thin film transistor 30A, as in the first embodiment described above, each of the paired source electrode 35A and drain electrode 35B has a connection layer 35a, a buffer layer 35b, and a wiring layer 35c in which the connection layer 35a, the buffer layer 35b, and the wiring layer 35c are viewed from the semiconductor film 14 side. A three-layer structure stacked in sequence. However, the second embodiment differs from the first embodiment in that the buffer layer 35b has a discontinuous structure (ie, an island structure), and the connection layer 35a is partially directly connected to the wiring layer 35c.
[0093] In addition to the materials listed in the first embodiment above, insulating materials such as Si beads can also be used as the material of the buffer layer 35b. ...
example 1
[0100] Figure 9A and Figure 9B is a cross-sectional view for explaining manufacturing steps of a thin film transistor (thin film transistor 30C) according to Modification 1 of each embodiment of the present invention. In the thin film transistor 30C, the buffer layer 35b has the same island structure as in the second embodiment described above. However, Modification 1 differs from the above-described first embodiment and the above-described second embodiment in that the buffer layer 35 b and the wiring layer 35 c are formed by a printing method.
[0101] In the thin film transistor 30C of this modified example, a metal film (such as Cu) to be the connection layer 35a is formed by an evaporation method, and then, as Figure 9A As shown, the buffer layer 35 b and the wiring layer 35 c are sequentially formed by a printing method (for example, an offset printing method). Subsequently, if Figure 9B As shown, for example, the metal film may be wet-etched using the layered st...
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