Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Primary plating-prior-to-etching metal frame subtraction imbedded chip normal-installation flat pin structure and process method

A technology of plating first and then etching, and a process method, which is applied in the direction of electrical components, electrical solid devices, circuits, etc.

Active Publication Date: 2014-03-19
JCET GROUP CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to overcome the above-mentioned shortcomings, and provide a kind of first plated and then etched metal frame subtractive embedded chip front mounting flat leg structure and process method, which can solve the problem of traditional metal Problems with lack of system functionality in leadframes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Primary plating-prior-to-etching metal frame subtraction imbedded chip normal-installation flat pin structure and process method
  • Primary plating-prior-to-etching metal frame subtraction imbedded chip normal-installation flat pin structure and process method
  • Primary plating-prior-to-etching metal frame subtraction imbedded chip normal-installation flat pin structure and process method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0068]A kind of processing method of the present invention is plated first and then etched metal frame subtraction method to embed the chip front-mounted flat leg structure as follows:

[0069] Step 1. Take the metal substrate

[0070] see figure 1 , take a piece of metal substrate with appropriate thickness, the material of this plate is mainly metal material, and the material of metal material can be copper, iron, galvanized, stainless steel, aluminum or metal that can achieve conductive function Material or non-all-metal material, etc., and the choice of thickness can be selected according to product characteristics.

[0071] Step 2, photoresist film pasting operation,

[0072] see figure 2 , A photoresist film that can be exposed and developed is pasted on the front and back of the metal substrate to protect the subsequent etching process. The photoresist film can be a dry photoresist film or a wet photoresist film.

[0073] Step 3. Remove part of the photoresist fil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a primary plating-prior-to-etching metal frame subtraction imbedded chip normal-installation flat pin structure and a process method. The structure comprises a metal substrate frame. The metal substrate frame is internally provided with base islands and pins. The pins are in step shapes. The front surface of each base island and the front surface of each pin are flush with the front surface of the metal substrate frame. The back surface of each pin is flush with the back surface of the metal substrate frame. The back surface of each base island is flush with the step surface of each pin. The step surface of each pin is provided with a metal layer. The back surface of each base island is provided with a chip through conductive or non-conductive bonding material. The front surface of the chip is connected with the surface of the metal layer on the step surface of each pin through a metal line. The front surface of the base island, the front surface and the back surface of each pin as well as the surface of the metal substrate frame are plated with an anti-oxidation layer or a coated antioxidant (OSP), wherein plastic packaging materials are flush with the anti-oxidation layers or coated antioxidants (OSP) on the upper and lower surfaces of the metal substrate frame. The beneficial effect of the structure and method is that: the problem that the function and the application performance of a conventional metal lead frame are limited since an object cannot be imbedded in the metal lead frame of such plate thickness is solved.

Description

technical field [0001] The invention relates to a first plating and then etching metal frame subtraction embedded chip front mounting flat foot structure and a process method. It belongs to the technical field of semiconductor packaging. Background technique [0002] There are two main types of conventional four-sided flat leadless metal leadframe structures: [0003] One is the four-sided flat no-lead package (QFN) lead frame. The lead frame of this structure is composed of a copper metal frame and a high temperature resistant adhesive film (such as Figure 18 shown). [0004] One is the pre-encapsulated quad flat no-leads (pQFN) leadframe, the leadframe structure of this structure includes the lead and the base island, and the etched area between the lead and the base island is filled with plastic encapsulant (such as Figure 19 shown). [0005] The above conventional metal lead frame has the following disadvantages: [0006] 1. The traditional metal lead frame, as the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/495H01L23/31H01L21/60
CPCH01L2224/92247H01L2224/48091H01L2224/73265
Inventor 梁新夫梁志忠王孙艳
Owner JCET GROUP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com