A method of manufacturing a semiconductor device

Abstract

The invention provides a production method for a semiconductor device. The method comprises the following steps: providing a semiconductor substrate provided with at least one grid electrode; performing a first non-crystallizing step on the substrate so as to form a first non-crystallizing area on the surface of the substrate; forming a photoresist layer on the first non-crystallizing area and the grid electrode; patterning the photoresist layer so as to define an LDD or a source drain electrode area; performing dopant ion implantation on the substrate; removing the photoresist layer; performing thermal annealing so as to form the LDD or the source drain electrode. According to the invention, when the photoresist layer with relatively thin width is adopted in the photolithography technique, the effect that the substrate reflection is reduced can be achieved without adopting a bottom anti-reflection coating, so that the swing curve effect of critical dimension error and serious standing wave effect can be avoided.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a manufacturing method of a semiconductor device. Background technique [0002] At present, integrated circuits have developed from only a few dozen devices on each chip in the 1960s to about 1 billion devices on each chip today. The rapid development of integrated circuits has played an important role in the support of lithography key role. Because it directly determines the physical size of a single semiconductor device, the level of photolithography technology has become one of the most important factors determining the integration of semiconductor devices. [0003] In the process of photolithography, the photoresist is exposed by using a light source to irradiate the photoresist, but at the same time, the upper and lower surfaces of the photoresist layer also produce reflections to produce notch effect and standing wave effect. Therefore, means are needed to reduce t...

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Problems solved by technology

[0006] For example, using bottom anti-reflective coating (BARC), that is, coating anti-reflective coating on the bottom of photoresist to reduce the reflection of bottom light, although this method can solve the problem of reducing reflection to a certain extent, but the cost is high And it is not easy to remove, so it will burden the subsequent etching steps

[0007] For example, the method of developing bottom anti-reflective coating (DBARC) can be developed, but the method itself is not mature enough to be implemented on a large scale

[0008] Another example is the use of top anti-reflective coatings (TARC), which do not absorb light but eliminate reflections through phase cancellation between light rays. This method is widely used in semiconductor manufacturing processes, although it can be used to a certain extent reduce the occurrence of the cycloid effect, but still cannot solve the problem of substrate reflection well

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