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Pixel with negatively-charged shallow trench isolation (STI) liner and method for making the same

A negative charge and trench technology, applied in the field of shallow trench isolation pixels, can solve problems such as difficulty in reducing pixel size and reducing effectiveness

Inactive Publication Date: 2014-03-26
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, existing Shallow Trench Isolation (STI) has some disadvantages that reduce its effectiveness and make it difficult to reduce the pixel size

Method used

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Embodiment Construction

[0014] Embodiments of processes and apparatus for pixels including negatively charged shallow trench isolation (STI) liners are described. Numerous specific details are described to provide a thorough understanding of embodiments of the invention, but one skilled in the relevant art will recognize that other methods, components, materials etc. to practice the invention. In some instances, well-known structures, materials, or operations are not shown or described in detail, but nevertheless are encompassed within the scope of the invention.

[0015] Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one of the described embodiments. Thus, appearances of the phrase "in one embodiment" or "in an embodiment" in this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features,...

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PUM

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Abstract

The invention relates to a pixel with negatively-charged shallow trench isolation (STI) liner and a method for making the same. Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.

Description

technical field [0001] The present invention relates generally to image sensors, and in particular, but not exclusively, to pixels comprising shallow trench isolation (STI) including liners. Background technique [0002] The trend in image sensors is to increase the number of pixels on the sensor, which means that the pixels themselves are getting smaller. In a typical image sensor, there is a shallow trench isolation (STI) adjacent to the photosensitive area of ​​each pixel. STIs are trenches whose purpose is to physically and electrically isolate adjacent pixels from each other so that charges from one pixel do not migrate to adjacent pixels and cause problems such as image blooming. STI can also be used to reduce dark current. Dark current is a small current that occurs in the absence of incident light. Dark current can be caused by material interfaces with tiny defects that generate charges (or electrons) that behave like signals even when no signal charges originate ...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/82
CPCH01L31/18H01L27/1463H01L31/02H01L27/14689
Inventor 钱胤戴幸志陈刚毛杜立文森特·韦内齐亚霍华德·E·罗兹
Owner OMNIVISION TECH INC
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