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A method for preparing gallium nitride nanowires without ammoniation
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A gallium nitride nanowire and ammoniation technology, which is applied in chemical instruments and methods, nanotechnology, gaseous chemical plating, etc., can solve problems such as restricted performance, environment and equipment corrosion, and poor directionality of GaN nanowires, and achieve field The effect of excellent emission performance
Active Publication Date: 2016-07-06
BEIJING UNIV OF TECH
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[0003] At present, the raw materials are expensive, and there is a certain degree of corrosion and pollution to the environment and equipment. At the same time, most of the prepared GaN nanowires have extremely poor directionality, which seriously restricts the improvement of their performance.
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Embodiment 1
[0028] (1) Ga 2 o 3 Mix the powder and carbon powder at a molar ratio of 1:1, and grind for 5 minutes to obtain the precursor powder;
[0029] (2) Use SBC-12 small ion sputtering instrument to plate Au30s on the cleaned and dried silicon wafer to obtain a substrate with a gold film of about 30nm on the surface;
[0030] (3) Ga 2 o 3 Powder and substrate, using plasma-enhanced chemical vapor deposition method: at reaction pressure of 50Pa, substrate temperature of 900°C, N 2 Velocity 30 cm 3 / min, H 2 Flow rate 60 cm 3 / min, adjust the power of the RF power supply to 40W to obtain a stable bright yellow-purple glow, and obtain GaN nanowires in the nucleation state under the condition of a reaction time of 40min. Its SEM image is shown in figure 1 .
Embodiment 2
[0032] (1) Ga 2 o 3 Mix the powder and carbon powder at a molar ratio of 1:4, and grind for 1 hour to obtain the precursor powder;
[0033] (2) After drying the silicon wafers cleaned and treated with hydrofluoric acid for 2 hours, use SBC-12 small ion sputtering instrument to plate Au10s to obtain a substrate with a gold film of about 5nm on the surface;
[0034] (3) Ga 2 o 3 Powder and substrate, adopt plasma-enhanced chemical vapor deposition method: at reaction pressure 50Pa, substrate temperature 800 ℃, N 2 Flow rate 20 cm 3 / min, H 2 Flow rate 10 cm 3 / min, adjust the power of the RF power supply to 60W to obtain a stable bright yellow-purple glow, and obtain a fibrous gallium nitride nanowire under the condition of a reaction time of 1h. Its SEM image is shown in figure 2 , XRD pattern see image 3 .
Embodiment 3
[0036] (1) Ga 2 o 3 Mix the powder and carbon powder at a molar ratio of 1:4, and grind for 1 hour to obtain the precursor powder;
[0037] (2) After drying the silicon wafers cleaned and treated with hydrofluoric acid for 20 minutes, use SBC-12 small ion sputtering instrument to plate Au10s to obtain a substrate with a gold film of about 5 nm on the surface;
[0038] (3) Ga 2 o 3 Powder and substrate, using plasma-enhanced chemical vapor deposition method: at reaction pressure of 50Pa, substrate temperature of 900°C, N 2 Flow rate 20 cm 3 / min, H 2 Flow rate 10 cm 3 / min, adjust the power of the RF power supply to 60W to obtain a stable bright yellow-purple glow, and obtain gallium nitride nanowires with a tip shape under the condition of a reaction time of 1h. Its SEM image is shown in Figure 4 , XRD pattern see Figure 5 .
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Abstract
The invention discloses a method for preparing a gallium nitride nano wire by non-ammoniation, belonging to the field of preparation and growth of inorganic compound semiconductor materials. The method comprises the steps: mixing Ga2O3 powder with powdered carbon, and grinding for above 2 min to obtain a precursor powder body; coating a metal catalyst film with a thickness of 5 nm-30 nm on a substrate dried after being cleaned and treated by hydrofluoric acid; placing the precursor powder body and the substrate in a plasma enhanced chemical vapor deposition system for preparing a stable brilliant yellow purple glow plasma gas through regulating a supply power by adopting an N2 and H2 reaction pressure of 10-100 Pa, a substrate temperature of 800-1100 DEG C and a radio frequency supply power of 40-90 W. According to the method, NH3 polluting the environment and corroding equipment is removed, a gallium nitride nano wire with a smooth surface and a monocrystal hexagonal wurtzite structure is prepared by adopting simple experiment equipment and a raw material which is low in price and easy to obtain, and typical nano wire photoluminescence characteristics and excellent field emission performance are obtained.
Description
technical field [0001] The invention relates to a method for preparing gallium nitride nanowires without ammoniation, and belongs to the field of preparation and growth methods of inorganic compound semiconductor materials. Background technique [0002] Wide bandgap compound semiconductor materials such as GaN, SiC, and diamond are the third generation of semiconductor materials after the first generation of Ge and Si element semiconductors, the second generation of GaAs, and InP compound semiconductors. As a third-generation wide-bandgap direct-gap semiconductor material, GaN has a bandgap width of 3.39eV at room temperature, and has a large electron mobility, good electrical and thermal conductivity, high breakdown field strength, and better Many properties such as radiation resistance, high temperature resistance and chemical corrosion resistance have become the preferred materials for electronic components with high energy, high temperature and high requirements on the w...
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