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Image sensor pixel structure for preventing image diffusion and manufacturing method thereof

An image sensor and pixel structure technology, applied in radiation control devices and other directions, can solve the problems of pixel signal cannot be reflected, the number of saturated pixels increases, and image color distortion, etc., to prevent image dispersion and eliminate pixel color distortion.

Active Publication Date: 2014-05-28
BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will make the crosstalked pixel signal unable to reflect the real light, cause the number of saturated pixels to increase than the actual one, and cause image color distortion and image dispersion phenomenon
Therefore, the image sensor with image dispersion phenomenon cannot correctly collect the object information near the strong light object, thereby reducing the quality of the image

Method used

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  • Image sensor pixel structure for preventing image diffusion and manufacturing method thereof
  • Image sensor pixel structure for preventing image diffusion and manufacturing method thereof
  • Image sensor pixel structure for preventing image diffusion and manufacturing method thereof

Examples

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Embodiment 1

[0031] The embodiment of the present invention provides an image sensor pixel structure for preventing image dispersion, which at least includes a photodiode placed in a semiconductor substrate, a shallow trench isolation area provided on one side of the photodiode, and a pixel structure provided on the other side of the photodiode. Two shallow trench isolation regions and a transistor drain active region arranged between the two shallow trench isolation regions and connected to the power supply, wherein a shallow trench isolation region on one side of the photodiode, and another One of the two shallow trench isolation regions and the active region (not fully covered) at the drain end of the transistor are provided with a deep P-type well region, wherein the active region on the drain end of the transistor A deep P-type well region, which covers the shallow trench isolation region far away from the photodiode, and does not contact the shallow trench isolation region closer to th...

Embodiment 2

[0041] The embodiment of the present invention provides a method for manufacturing an image sensor pixel structure that prevents image dispersion. The specific process steps include Figure 4 ~ Figure 7 The steps shown:

[0042] 1) Such as Figure 4 As shown, after the STI process in the traditional CMOS process, an oxide layer 401 is grown on the surface of the semiconductor substrate as a process protection layer with a thickness of 10 nm to 12 nm. This embodiment uses a P-type silicon substrate.

[0043] 2) Such as Figure 5 As shown, the photoresist is spin-coated and developed to open an opening in the predetermined P-well injection area; the thickness of the photoresist is not less than 2.7um. The opening in the predetermined P-well injection region includes: an opening facing a shallow trench isolation region on one side of the photodiode, and another opening covering the shallow trench isolation region and part of the active region away from the photodiode. Contact with t...

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Abstract

The invention discloses an image sensor pixel structure for preventing image diffusion and a manufacturing method thereof, wherein a shallow slot isolation region on one side of a photodiode of the image sensor pixel structure, one of two shallow slot isolation regions on the other side of the photodiode and an active region at a drain terminal part of a transistor are respectively provided with a deep P-type well region, wherein the deep P-type well region on the active region at the drain terminal of the transistor covers the shallow slot isolation region which is far away from the photodiode and is not in contact with the shallow slot isolation region which is close to the photodiode, so that an overflow charge current guide channel is formed between the photodiode and the active region at the drain terminal of the transistor. By adopting the image sensor pixel structure and the manufacturing method thereof disclosed by the invention, diffusion phenomenon of the acquired image can be prevented, and the problem of color distortion of surrounding pixels of an intense-light image is also eliminated.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing technology, in particular to an image sensor pixel structure for preventing image dispersion and a manufacturing method thereof. Background technique [0002] Image sensors have been widely used in digital cameras, mobile phones, medical equipment, automobiles and other applications. Especially the rapid development of manufacturing CMOS (Complementary Metal Oxide Semiconductor) image sensor technology has made people have higher requirements for the output image quality of the image sensor. [0003] In the image sensor chip of the prior art, the bright spot or bright line area in the collected image is larger than the actual size of the object image. For example, when the photographed photo contains images of the sun, car headlights, incandescent lamps, or highly reflective bright objects, these objects will be larger than the actual size, and the bright areas such as the sun and ligh...

Claims

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Application Information

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IPC IPC(8): H01L27/146
Inventor 郭同辉陈杰刘志碧唐冕旷章曲
Owner BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
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