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Low-temperature fabrication of metal oxide films and metal composite films derived from nanomaterials

A technology of oxide film and oxide, which is applied in metal material coating process, semiconductor/solid-state device manufacturing, liquid chemical plating, etc., can solve the problem of poor morphological connection and electrical connection, hindering charge carrier transport, and limiting device performance And other issues

Inactive Publication Date: 2017-04-12
NORTHWESTERN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Otherwise, the remaining ligands in the film would create poor morphological and electrical connections between the nanomaterials, hamper the transport of charge carriers, and limit the corresponding device performance

Method used

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  • Low-temperature fabrication of metal oxide films and metal composite films derived from nanomaterials
  • Low-temperature fabrication of metal oxide films and metal composite films derived from nanomaterials
  • Low-temperature fabrication of metal oxide films and metal composite films derived from nanomaterials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0101] Example 1: Preparation and Thermodynamic Analysis of Metal Oxide Precursor Compositions

[0102] All reagents were purchased from Sigma-Aldrich and used as received.

Embodiment 1A

[0103] Embodiment 1A: IZO precursor composition (In 0.7 Zn 0.3 o 1.35 ) preparation

[0104] Indium nitrate (In(NO 3 ) 3 2.85H 2 (2; 352.2 mg) was dissolved in 5 mL of 2-methoxyethanol, and 0.2 mL of acetylacetone was added. Zinc nitrate (Zn(NO 3 ) 2 ·6H 2 (2,297.5 mg) was dissolved in 5 mL of 2-methoxyethanol, and 0.2 mL of acetylacetone was added. After the metal nitrate is completely dissolved, add 114 μL of 14.5 M NH 3|（水） Added to each solution, then aged each solution for 12 hours. The two mixed solutions were stirred and mixed at a ratio of In:Zn=7:3 for 1 hour to obtain the indium zinc oxide (IZO) precursor composition.

Embodiment 1B

[0105] Embodiment 1B: ITO precursor composition (In 0.9 sn 0.1 o 1.55 ) preparation

[0106] Indium nitrate (In(NO 3 ) 3 2.85H 2 (2; 352.2 mg) was dissolved in 5 mL of 2-methoxyethanol, and 0.2 mL of acetylacetone was added. After the metal nitrate is completely dissolved, add 114 μL of 14.5 M NH 3 Aqueous solution was added to the solution, followed by aging for 12 hours. Tin chloride (SnCl 2 , 189.6 mg) was dissolved in 5 mL of 2-methoxyethanol, and 0.2 mL of acetylacetone was added. After the tin chloride was completely dissolved, 57 μL of 14.5 M NH 3|（水） Added to the solution and the solution was aged for 12 hours. The indium tin oxide (ITO) precursor composition was obtained by stirring and mixing the two mixed solutions at a ratio of In:Sn=9:1 for 1 hour.

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Abstract

Disclosed herein is a novel method for fabricating thin films of metal oxides and metal composites derived from nanomaterials at low temperatures (<400° C.) via liquid phase methods. The thin film of the present invention can be used as thin film semiconductor, thin film dielectric or thin film conductor, and can be implemented in semiconductor devices, such as thin film transistors and thin film photovoltaic devices.

Description

Background technique [0001] Recent research has focused on transformative applications of giant electronics, such as transparent, flexible flat-panel displays, solar cells, and large-area sensor arrays. Emerging materials for these functions include organic semiconductors, carbon-based semiconductors, and various inorganic nanomaterials. However, metal oxide electronics are far superior to today's dominant hydrogenated amorphous silicon (a-Si:H) technology (charge mobility ~1 cm 2 / Vs) is perhaps best suited to achieve large-area compatibility and impressive device performance (charge mobility as high as ~100 cm 2 / Vs) with the greatest prospects. These promising qualities have inspired efforts to aid in the fabrication of oxide electronics on flexible plastic substrates and compatible with low-cost, high-throughput solution processing. [0002] Although promising, solution processing of metal oxide electronics typically requires high annealing temperatures (e.g. T 退火 ≥400...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/28H01L21/44H01L29/786H01L29/66C23C18/12
CPCC23C18/1216C23C18/1225C23C18/1237C23C18/125C23C18/127H01L29/66742H01L29/78693H01L29/66969C23C18/12H01L21/02172H01L21/02178H01L21/02192H01L21/02205H01L21/02244H01L21/02565H01L21/02614H01L21/28506H01L21/441H01L21/443H01L21/477H01L29/45H01L29/517H01L29/7869
Inventor A·菲奇提T·J·马克斯M·G·卡纳齐迪斯金明吉W·C·希茨颜河夏禹
Owner NORTHWESTERN UNIV