Semiconductor light-emitting device and illumination device

A light-emitting device and semiconductor technology, which is applied in the direction of lighting devices, semiconductor lasers, components of lighting devices, etc., can solve problems such as improving the sense of presence

Inactive Publication Date: 2014-06-04
MITSUBISHI CHEM CORP
View PDF22 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] A light-emitting device using a semiconductor light-emitting element improves presence as an energy-saving light-emitting device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor light-emitting device and illumination device
  • Semiconductor light-emitting device and illumination device
  • Semiconductor light-emitting device and illumination device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0222]

[0223] Experiments were conducted to determine how the luminous efficiency and color rendering of the semiconductor light-emitting device are affected by the type of cut filter (cut-off method) included in the semiconductor light-emitting device. As an excitation source, a semiconductor light-emitting device with a wavelength of 410 nm was used, and as Reference Examples 1 to 3, semiconductor light-emitting devices without a cut filter were manufactured. Next, a semiconductor light-emitting device was manufactured as Example 1 using a light-absorbing cut filter (CLAREX N-113 manufactured by Nitto Jushi Kogyo Co., Ltd.) that cuts off a wavelength of 420 nm or less. It should be noted that the excitation light transmittance of the semiconductor light emitting device according to Example 1 without the cut filter was 100%.

[0224] Table 8 shows the excitation light transmittance, luminous efficiency, conversion efficiency, correlated color temperature and damage coeffi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A problem which the present invention addresses is to provide a semiconductor light-emitting device with which, in addition to an improved light emission efficiency, a color rendering property improvement is implemented. This semiconductor light-emitting device comprises a cut filter which absorbs short wavelength light of 430nm or less, and transmits light of wavelengths longer than 430nm. In a spectrum of light which the semiconductor light-emitting device outputs, the light emission peak intensity for a discharge light of the semiconductor light-emitting element is 50% or less of the maximum intensity of the spectrum, allowing solving the problem.

Description

technical field [0001] The present invention relates to a semiconductor light emitting device, in particular to a semiconductor light emitting device with high luminous efficiency and improved color rendering. In addition, it relates to a lighting device including the semiconductor light emitting device. Background technique [0002] A light-emitting device using a semiconductor light-emitting element has improved presence as an energy-saving light-emitting device. On the other hand, various techniques for further improving the luminous efficiency of light-emitting devices using semiconductor light-emitting elements have been proposed. [0003] For example, an illumination device has been proposed that includes a cut filter that reflects light other than visible light in an opening of a package in order to improve luminous efficiency (see Patent Document 1). This technology is used in backlights for liquid crystal displays to realize devices with high luminous efficiency. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50F21V9/08F21Y101/02
CPCH01L33/60F21Y2101/02H01L2224/48091F21V9/16F21V7/22F21V9/06H01L33/50H01L25/0753F21V9/00H01L33/44F21V9/30F21Y2101/00H01L2924/00F21Y2107/30F21Y2115/10H01L2924/00014H01L33/58H01S5/3013
Inventor 作田宽明小原悠辉
Owner MITSUBISHI CHEM CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products