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A kind of preparation method of textured surface of polycrystalline silicon chip

A polycrystalline silicon wafer and suede technology, applied in the field of solar cells, can solve problems such as failure to obtain breakthroughs, affect sales, and unqualified products, and achieve the effects of improving appearance, adequate response, and increasing production line productivity

Active Publication Date: 2016-06-29
SUZHOU ISILVER MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, in the process of selling to Japan, the other party will first evaluate the appearance of the product. If there are obvious flower baskets and watermarks on the cell, it will be judged as unqualified, which seriously affects sales.
[0006] In response to the above problems, the staff in this field have conducted a large number of research experiments and found that simple adjustment of process parameters, such as corrosion temperature, corrosion time, etc., cannot achieve a breakthrough

Method used

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  • A kind of preparation method of textured surface of polycrystalline silicon chip
  • A kind of preparation method of textured surface of polycrystalline silicon chip

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] see figure 2 Shown, a kind of preparation method of polysilicon sheet suede, comprises the steps:

[0041] The first step: Turn on the circulation function of the first texturing tank for acidic solution texturing, the composition of the texturing mixed solution in the texturing tank: CrO 3 , HF aqueous solution, and deionized water are 1%, 44.7%, and 52% respectively, and polyethylene glycol, polyacrylamide, acrylic acid, and deionized water are also included, and their mass fractions are 0.024%, 0.028%, and 0.04% respectively. %, 2.208%; the corrosion time is 300s, and the temperature of the texturing solution is 23.5°C;

[0042] The second step: turn on the circulation and bubbling function of the second texturing tank for acid solution texturing, the composition of the texturing mixed solution in the texturing tank: CrO 3 The mass fractions of HF aqueous solution and deionized water are 0.6%, 51.7%, and 45.4% respectively; polyethylene glycol, polyacrylamide, acr...

Embodiment 2

[0048] A method for preparing a textured surface of polycrystalline silicon wafers, comprising the steps of:

[0049] The first step: Turn on the circulation function of the first texturing tank for acidic solution texturing, the composition of the texturing mixed solution in the texturing tank: CrO 3 , HF aqueous solution, and deionized water have mass fractions of 0.5%, 40%, and 57.5%, respectively, and polyethylene glycol, polyacrylamide, acrylic acid, and deionized water, whose mass fractions are 0.004%, 0.01%, and 0.04% respectively %, 1.946%; the corrosion time is 350s, and the temperature of the texturing solution is 10°C;

[0050] The second step: turn on the circulation and bubbling function of the second texturing tank for acid solution texturing, the composition of the texturing mixed solution in the texturing tank: CrO 3 The mass fractions of HF aqueous solution and deionized water are 0.3%, 45%, and 52.7% respectively; polyethylene glycol, polyacrylamide, acrylic...

Embodiment 3

[0055] A method for preparing a textured surface of polycrystalline silicon wafers, comprising the steps of:

[0056] The first step: Turn on the circulation function of the first texturing tank for acidic solution texturing, the composition of the texturing mixed solution in the texturing tank: CrO 3 The mass fractions of HF aqueous solution and deionized water are 1.5%, 50%, and 45.5% respectively, and polyethylene glycol, polyacrylamide, acrylic acid, and deionized water are also included, and their mass fractions are 0.03%, 0.03%, and 0.15% respectively. %, 2.79%; the corrosion time is 250s, and the temperature of the texturing solution is 30°C;

[0057] The second step: turn on the circulation and bubbling function of the second texturing tank for acid solution texturing, the composition of the texturing mixed solution in the texturing tank: CrO 3 The mass fractions of HF aqueous solution and deionized water are 1%, 60%, and 36% respectively; polyethylene glycol, polyacr...

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Abstract

The invention discloses a method for preparing a polycrystalline silicon water texture surface. The method comprises the following steps: (1) polycrystalline silicon wafers to be treated are put in a first texture making groove for first texture making, and the texture making mixed liquid stays in the circulating state; (2) the polycrystalline silicon wafers to be treated are put in a second texture making groove for second texture making, and the texture making mixed liquid stays in the circulating state and bubbling condition; and (3) the polycrystalline silicon wafers to be treated are put in a third texture making groove for third texture making, and the texture making mixed liquid stays in the circulating state and bubbling condition. Experiments obtained from the production lines prove that only 80 of 150000 silicon wafers which are subjected to texture making according to the method of the invention produce water marks, and the removal of water marks is greatly improved compared with the existing technologies; in addition, after the texture is made by using the method of the invention, the silicon wafers almost have no basket marks on the surface, so that the appearance of a battery slice is greatly improved based on the method, and the technical problems to be solved in the field are solved.

Description

technical field [0001] The invention relates to a method for preparing a suede surface of a polycrystalline silicon chip, which belongs to the field of solar cells. Background technique [0002] In the prior art, during the preparation of solar cells, in order to improve the performance and efficiency of solar cells, texture is generally made on the surface of silicon chips. The effective textured structure can make the incident sunlight reflect and refract multiple times on the surface of the silicon wafer, changing the direction of the incident light in the silicon wafer. Increase the absorption of infrared light by the silicon wafer and improve the photoelectric conversion efficiency. [0003] At present, the texturing method of polysilicon wafers generally uses chromic acid texturing, and the equipment is low-cost and wide-ranging tank-type texturing equipment. The specific method is to add a mixed solution of chromic acid to a single texturing tank. Then immerse the p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C23F1/24C30B29/06H01L31/18
CPCY02P70/50
Inventor 孟祥熙章灵军王栩生姜小松周军许涛
Owner SUZHOU ISILVER MATERIALS