Chemical mechanical planarization endpoint detection method and device

Abstract

The invention provides a method and device for chemical-mechanical planarization end point detection. The method comprises the following steps that according to set planarization technological parameters, a material to be planarized is planarized on a first polishing table, data graphing is conducted on reflected light signals which are collected, and then a first surface graph and a second surface graph are obtained; under the condition that the first surface graph conforms to a first feature graph, back pressure is applied to the planarized material in a corresponding region according to the first feature graph, and then the material is further planarized; under the condition that the second surface graph conforms to a third feature graph, back pressure is applied to the planarized material in a corresponding region according to the third feature graph, and then the material is further planarized. By means of the method and device for chemical-mechanical planarization end point detection, the overall planarization effect of the planarized material is improved, the planarization machining quality of the planarized material is guaranteed, the percent of pass of one-off machining of a chemical-mechanical planarization device is increased, and the development cost of the chemical-mechanical planarization end point detection technology is greatly lowered.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a chemical mechanical planarization endpoint detection method and device. Background technique [0002] In VLSI production, the characteristic line width of wafers (silicon wafers) continues to shrink, while the number of metal interconnection layers continues to increase, and the requirements for global planarization of silicon wafers are becoming more and more stringent. Chemical-Mechanical Planarization (CMP), also known as Chemical-Mechanical Polishing, is a technology in the semiconductor device manufacturing process that uses chemical etching and mechanical force to process silicon wafers or Other substrate materials are planarized. As a global planarization process, chemical mechanical planarization has become another essential key technology after photolithography and etching in the integrated circuit manufacturing process. [0003] During the...

AI Technical Summary

Problems solved by technology

[0008] The above online endpoint detection method determines the endpoint signal by calculating the average value and variance of the overall or local detection data, which is an overall estimation method and cannot well reflect the planarization of the local area of ​​the wafer surface

Moreover, in the above-mentioned online endpoint detection method, it is necessary to develop a differentiated endpoint detection algorithm for a specific wafer pattern, which will undoubtedly consume a lot of time and increase the cost of related test wafers, equipment consumables, energy, etc.

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