push-push Microwave Voltage Controlled Oscillator IC

Abstract

The invention provides a push-push microwave voltage-controlled oscillator integrated circuit which comprises a semiconductor material substrate and a push-push voltage-controlled oscillator. The push-push voltage-controlled oscillator is formed by two single-end voltage-controlled oscillators in a connecting mode. Each single-end voltage-controlled oscillator comprises an active amplifier module, a bias current source module and an LC resonator module. In the two single-end voltage-controlled oscillators of the push-push microwave voltage-controlled oscillator, broadband high-frequency impedance network modules are connected between the active amplifier modules and the bias current source modules respectively. Two LC oscillating groove modules of the push-push microwave voltage-controlled oscillator are connected with each other, and inductance connecting portions are connected to the ground through the broadband high-frequency impedance network modules. Bad influence of the gain of the active amplifier modules from the limited high-frequency output impedance of the bias current source modules can be well lowered, the amplitude of the oscillator and the amplitude of output signals can be well improved, and phase noise can be lowered.

Description

technical field [0001] The invention relates to a semiconductor microwave push-push voltage-controlled oscillator integrated circuit. The oscillator uses a broadband high-frequency impedance network to increase the high-frequency output impedance of a bias current source module to enhance the loop gain of the oscillator. Then effectively increase the amplitude of the oscillator and reduce the phase noise of the oscillator; at the same time, a high-frequency impedance network is used to make the entire voltage-controlled oscillator work in a differential mode in order to extract the second harmonic of the oscillator. Background technique [0002] In the microwave complementary metal oxide semiconductor (CMOS) / silicon germanium (SiGe) BiCMOS wireless front-end transceiver system, the voltage-controlled oscillator (VCO, voltage-controlled oscillator) plays an important role in providing local oscillator signals for the transceiver system. The phase noise performance affects the...

AI Technical Summary

Problems solved by technology

There are two traditional techniques: one is to enhance the inductance L a and L b The mutual inductance between, but this method is based on the premise of sacrificing the Q value of the inductor, so it will have a certain impact on the phase noise

Another technique is to place the inductor L a and L b The ground terminals of the chip are connected together and lead to a large inductor with high Q value outside the chip. The principle of this technology is to use the high impedance strength generated by the off-chip inductor to force two single-ended voltage-controlled oscillators to work in differential mode. This approach allows the on-chip inductor L a and L b The Q value is optimized, so it will not cause the deterioration of the phase noise, but the cost of the entire transceiver system will be increased due to the addition of an off-chip inductor, and the PCB area of ​​the entire transceiver system will also be increased.

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