Electrostatic chuck

Abstract

Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for supporting and retaining a substrate having a given width may include a dielectric member having a support surface configured to support a substrate having a given width; an electrode disposed within the dielectric member beneath the support surface and extending from a center of the dielectric member outward to an area beyond an outer periphery of the substrate as defined by the given width of the substrate; an RF power source coupled to the electrode; and a DC power source coupled to the electrode.

Description

technical field [0001] Embodiments of the invention generally relate to the processing of semiconductors. Background technique [0002] The inventors have observed that conventional electrostatic chucks used to hold substrates in plasma processing chambers, such as etch chambers, may produce process non-uniformities near the edges of the substrate. Such process non-uniformity is generally caused by differences in the electrical and thermal properties of the materials and substrates used to manufacture the components of the electrostatic chuck, such as the processing kit. Furthermore, the inventors have observed that conventional electrostatic chucks typically generate a non-uniform electromagnetic field above the substrate that induces the plasma to be formed to have a plasma sheath that The sheath bends toward the substrate near the edge of the substrate. The inventors have further found that such deflection of the plasma sheath causes the trajectory of ions bombarding th...

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Problems solved by technology

The inventors have further found that such deflection of the plasma sheath causes the trajectory of ions bombarding the substrate to be different near the edge of the substrate compared to the center of the substrate, thereby causing uneven etching of the substrate, thus affecting the overall CD Uniformity

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